Datasheet > GJ80LS02

GJ80LS02

更新时间： 2024-11-09 02:52:15

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	246K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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GJ80LS02 数据手册

Pb Free Plating Product

ISSUED DATE :2006/02/15

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

25V

8mꢀ

75A

GJ80LS02

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GJ80LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast

switching performance.

The TO-252 package is universally preferred for all commercial-industrial surface mount applications and

suited for low voltage applications such as DC/DC converters.

Features

*Low On-resistance

*Simple Drive Requirement

*Fast Switching Speed

Package Dimensions

TO-252

Millimeter

Min.

0.50

2.20

0.45

0.90

5.40

0.80

REF.

Min.

Max.

6.80

5.50

7.20

3.00

Max.

0.70

2.40

0.55

0.15

1.50

5.80

1.20

6.40

5.20

6.80

2.40

2.30 REF.

0.70

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

=100к

250

Total Power Dissipation

Linear Derating Factor

0.75

-55 ~ +150

W/к

Operating Junction and Storage Temperature Range

Tj, Tstg

Thermal Data

Parameter

Symbol

Rthj-case

Rthj-amb

Value

1.4

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

110

GJ80LS02

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