Datasheet > GI9915

GI9915

更新时间： 2024-11-23 03:39:23

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
5页	234K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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中文翻译

获取价格

数据手册

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GI9915 数据手册

Pb Free Plating Product

ISSUED DATE :2005/02/21

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

20V

50mꢀ

20A

GI9915

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GI9915 provide the designer with the best combination of fast switching, ruggedized device design, ultra

low on-resistance and cost-effectiveness.

Features

*Low on-resistance

*Capable of 2.5V gate drive

*Low drive current

*Single Drive Requirement

Package Dimensions

TO-251

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

7.80

Min.

Max.

0.70

2.40

0.55

0.60

1.50

5.80

6.40

5.20

6.80

7.20

0.50

2.20

0.45

0.90

5.40

2.30 REF.

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

Continuous Drain Current, V_GS@4.5V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

=125к

Total Power Dissipation

W/к

Linear Derating Factor

0.2

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-c

Value

4.8

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

110

I9915

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