Datasheet > GIB1403

GIB1403

更新时间： 2024-11-25 22:05:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
2页	87K
描述
FAST EFFICIENT PLASTIC RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GIB1403 数据手册

NEW PRODUCT

GIB1401 THRU GIB1404

FAST EFFICIENT PLASTIC RECTIFIER

Reverse Voltage - 50 to 200 Volts

Forward Current - 8.0 Amperes

TO-263AB

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦ Glass passivated chip junction

♦ Low power loss

0.160 (4.06)

0.190 (4.83)

0.380 (9.65)

0.420 (10.67)

0.045 (1.14)

0.055 (1.40)

0.245 (6.22)

MIN

♦ Low leakage current

0.047 (1.19)

♦ High surge capability

0.320 (8.13)

0.360 (9.14)

0.055 (1.40)

0.575 (14.60)

0.625 (15.88)

♦ Superfast recovery time for high efficiency

♦ High temperature soldering in accordance with

CECC 802 / Reflow guaranteed

SEATING

PLATE

0.090 (2.29)

-T-

0.110 (2.79)

0.018 (0.46)

0.025 (0.64)

0.095 (2.41)

0.100 (2.54)

0.080 (2.03)

0.110 (2.79)

0.027 (0.686)

0.037 (0.940)

MECHANICAL DATA

Case: JEDEC TO-263AB molded plastic body

Terminals: Lead solderable per MIL-STD-750,

Method 2026

PIN 1

PIN 2

K - HEATSINK

Polarity: As marked

Mounting Position: Any

Weight: 0.064 ounce, 1.81 grams

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

V_RRM

V_RMS

V_DC

GIB1401

GIB1402

100

GIB1403

150

GIB1404

200

UNITS

Volts

Amps

Maximum recurrent peak reverse voltage

Maximum RMS voltage

105

140

Maximum DC blocking voltage

100

150

200

Maximum average forward rectified current at T_C=125°C

I_(AV)

8.0

Peak forward surge current

8.3ms single half sine-wave superimposed

on rated load (JEDEC Method) at T_C=125°C

I_FSM

125.0

Amps

Maximum instantaneous forward voltage at:

I_F=4A, T_J=100°C

0.800

0.895

0.900

0.975

I_F=8A, T_J=100°C

I_F=4A, T_J=25°C

I_F=8A, T_J=25°C

V_F

Volts

Maximum DC reverse current

at rated DC blocking voltage

T_C=25°C

T_C=100°C

5.0

150.0

I_R

µA

Maximum reverse recovery time _{(NOTE 1)}

Typical junction capacitance _{(NOTE 2)}

Typical thermal resistance _{(NOTE 3)}

t_rr

C_J

35.0

85.0

R_ΘJC

T_J, T_STG

2.25

°C/W

°C

Operating and storage temperature range

-65 to +150

NOTES:

(1) Reverse recovery test conditions: I_F=0.5A, I_R=1.0A, I_rr=0.25A

(2) Measured at 1.0 MH_Zand applied reverse voltage of 4.0 Volts

(3) Thermal resistance from junction to case mounted on heatsink

4/98

中文翻译

下载PDF

与GIB1403相关器件

型号	品牌	获取价格	描述	数据表
GIB1403-E3/81	VISHAY	获取价格	DIODE GEN PURP 150V 8A TO263AB
GIB1403HE3/45	VISHAY	获取价格	DIODE 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
GIB1403-HE3/45	VISHAY	获取价格	DIODE 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
GIB1403HE3/81	VISHAY	获取价格	DIODE 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
GIB1404	VISHAY	获取价格	FAST EFFICIENT PLASTIC RECTIFIER
GIB1404-E3/45	VISHAY	获取价格	DIODE 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
GIB1404-E3/81	VISHAY	获取价格	DIODE 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
GIB1404HE3/45	VISHAY	获取价格	DIODE GEN PURP 200V 8A TO263AB
GIB1404-HE3/45	VISHAY	获取价格	DIODE 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
GIB1404HE3/81	VISHAY	获取价格	DIODE 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R

与GIB1403相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

GIB1403

GIB1403 数据手册

与GIB1403相关器件

与GIB1403相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

GIB1403

GIB1403 数据手册

与GIB1403相关器件

与GIB1403相关文章

您还可以找

您在本页遇到什么问题？