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GIB2404-HE3/45 PDF预览

GIB2404-HE3/45

更新时间: 2024-02-15 22:50:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 82K
描述
DIODE 16 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

GIB2404-HE3/45 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:D2PAK
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:unknown风险等级:5.7
Is Samacsys:NBase Number Matches:1

GIB2404-HE3/45 数据手册

 浏览型号GIB2404-HE3/45的Datasheet PDF文件第2页浏览型号GIB2404-HE3/45的Datasheet PDF文件第3页浏览型号GIB2404-HE3/45的Datasheet PDF文件第4页 
GIB2401 thru GIB2404  
Vishay General Semiconductor  
Dual Common-Cathode Ultrafast Plastic Rectifier  
FEATURES  
• Glass passivated chip junction  
• Ultrafast recovery time  
TO-263AB  
K
• Low switching losses, high efficiency  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 245 °C  
2
1
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
PIN 1  
PIN 2  
K
HEATSINK  
TYPICAL APPLICATIONS  
For use in high frequency rectifier of switching mode  
power supplies, inverters, freewheeling diodes,  
dc-to-dc converters, and other power switching  
application.  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
16 A  
Case: TO-263AB  
VRRM  
IFSM  
trr  
50 V to 200 V  
125 A  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
35 ns  
VF  
0.895 V  
150 °C  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
TJ max.  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
VRRM  
VRMS  
VDC  
GIB2401  
GIB2402  
100  
GIB2403  
150  
GIB2404  
200  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
V
V
V
A
70  
105  
140  
Maximum DC blocking voltage  
Maximum average forward rectified current at TC = 125 °C  
100  
150  
200  
IF(AV)  
16  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
125  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 150  
°C  
Document Number: 88633  
Revision: 30-Aug-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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