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GIB2402HE3/45 PDF预览

GIB2402HE3/45

更新时间: 2024-11-29 14:33:43
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
4页 89K
描述
DIODE 16 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

GIB2402HE3/45 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.41
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.8 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:125 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:16 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40Base Number Matches:1

GIB2402HE3/45 数据手册

 浏览型号GIB2402HE3/45的Datasheet PDF文件第2页浏览型号GIB2402HE3/45的Datasheet PDF文件第3页浏览型号GIB2402HE3/45的Datasheet PDF文件第4页 
GIB2401, GIB2402, GIB2403, GIB2404  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode Ultrafast Plastic Rectifier  
FEATURES  
• Power pack  
TO-263AB  
• Glass passivated chip junction  
• Ultrafast recovery time  
K
• Low switching losses, high efficiency  
• High forward surge capability  
2
1
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 245 °C  
PIN 1  
PIN 2  
K
• AEC-Q101 qualified  
HEATSINK  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in high frequency rectifier of switching mode power  
supplies, inverters, freewheeling diodes, DC/DC converters,  
and other power switching application.  
PRIMARY CHARACTERISTICS  
IF(AV)  
16 A  
VRRM  
IFSM  
50 V, 100 V, 150 V, 200 V  
MECHANICAL DATA  
Case: TO-263AB  
125 A  
35 ns  
trr  
Molding compound meets UL 94V-0 flammability rating  
VF  
0.895 V  
150 °C  
Base P/N-E3  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
-
RoHS-compliant, commercial grade  
TJ max.  
Package  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
TO-263AB  
Diode variation  
Common cathode  
meets JESD 201 class 2 whisker test  
Polarity: As marked  
Mounting Torque: 10 in-lbs max.  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VRRM  
VRMS  
GIB2401  
GIB2402  
100  
GIB2403  
150  
GIB2404  
200  
UNIT  
Max. repetitive peak reverse voltage  
Max. RMS voltage  
50  
35  
50  
V
V
V
A
70  
105  
140  
Max. DC blocking voltage  
VDC  
100  
150  
200  
Max. average forward rectified current at TC = 125 °C  
IF(AV)  
16  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
125  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 150  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL GIB2401 GIB2402 GIB2403 GIB2404  
UNIT  
IF = 4 A  
IF = 8 A  
IF = 4 A  
IF = 8 A  
TJ = 25 °C  
TJ = 25 °C  
TJ = 100 °C  
TJ = 100 °C  
0.900  
0.975  
Max. instantaneous forward voltage  
per diode  
VF  
V
0.800  
0.895  
T
C = 25 °C  
TC = 100 °C  
IF = 0.5 A, IR = 1.0 A,  
rr = 0.25 A  
4 V, 1 MHz  
50  
5.0  
Max. DC reverse current per diode at  
rated DC blocking voltage  
IR  
μA  
150  
500  
Max. reverse recovery time  
trr  
35  
85  
ns  
I
Typical junction capacitance per diode  
CJ  
pF  
Revision: 20-Aug-13  
Document Number: 88633  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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