Datasheet > GI9916

GI9916

更新时间： 2024-09-27 03:39:23

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
5页	271K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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中文翻译

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数据手册

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GI9916 数据手册

Pb Free Plating Product

ISSUED DATE :2005/03/03

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

18V

25mꢀ

35A

GI9916

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GI9916 provide the designer with the best combination of fast switching, ruggedized device design, ultra

low on-resistance and cost-effectiveness.

Features

*Single Drive Requirement

*Low on-resistance

*Capable of 2.5V gate drive

*Low drive current

Package Dimensions

TO-251

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

7.80

Min.

Max.

0.70

2.40

0.55

0.60

1.50

5.80

6.40

5.20

6.80

7.20

0.50

2.20

0.45

0.90

5.40

2.30 REF.

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

Continuous Drain Current, V_GS@4.5V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

=125к

Total Power Dissipation

W/к

Linear Derating Factor

0.4

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-c

Value

2.5

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

110

I9916

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