Datasheet > GI9960

GI9960

更新时间： 2024-01-18 19:30:22

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	236K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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中文翻译

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数据手册

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GI9960 数据手册

Pb Free Plating Product

ISSUED DATE :2004/12/21

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

40V

16mꢀ

42A

GI9960

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GI9960 provides the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

Features

*Simple Drive Requirement

*Low Gate Charge

*Fast Switching

Package Dimensions

TO-251

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

7.80

Min.

Max.

0.70

2.40

0.55

0.60

1.50

5.80

6.40

5.20

6.80

7.20

0.50

2.20

0.45

0.90

5.40

2.30 REF.

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

=100к

195

Total Power Dissipation

W/к

Operating Junction and Storage Temperature Range

Linear Derating Factor

Tj, Tstg

-55 ~ +150

0.36

Thermal Data

Parameter

Symbol

Rthj-c

Value

2.8

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

110

I9960

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