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GI828-E3/54 PDF预览

GI828-E3/54

更新时间: 2024-11-29 14:50:31
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
4页 79K
描述
DIODE 5 A, 800 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, CASE P600, 2 PIN, Rectifier Diode

GI828-E3/54 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.74Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.05 VJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:300 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:5 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:800 V
最大反向恢复时间:0.2 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

GI828-E3/54 数据手册

 浏览型号GI828-E3/54的Datasheet PDF文件第2页浏览型号GI828-E3/54的Datasheet PDF文件第3页浏览型号GI828-E3/54的Datasheet PDF文件第4页 
GI820, GI821, GI822, GI824, GI826, GI828  
www.vishay.com  
Vishay General Semiconductor  
Fast Switching Plastic Rectifier  
FEATURES  
• Fast switching for high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High forward current operation  
• High forward surge capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
P600  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in fast switching rectification of power supply,  
inverters, converters and freewheeling diodes for consumer  
and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
5.0 A  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V  
Note  
VRRM  
These devices are not AEC-Q101 qualified.  
IFSM  
300 A  
200 ns  
1.05 V  
10 μA  
trr  
VF  
MECHANICAL DATA  
Case: P600, void-free molded epoxy body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
IR  
TJ max.  
Package  
Diode variation  
150 °C  
P600  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
Single die  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL GI820  
GI821  
100  
70  
GI822  
200  
GI824  
400  
GI826  
600  
GI828  
800  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
75  
V
V
V
V
140  
280  
420  
560  
Maximum DC blocking voltage  
Maximum non-repetitive peak reverse voltage  
100  
150  
200  
400  
600  
800  
VRSM  
250  
450  
650  
880  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TA = 55 °C  
IF(AV)  
5.0  
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
300  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 50 to + 150  
°C  
Revision: 24-Jul-13  
Document Number: 88629  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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