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GI850/1 PDF预览

GI850/1

更新时间： 2024-11-08 03:01:51
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
2页 21K
描述
Rectifier Diode, 1 Element, 3A, 50V V(RRM),

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GI850/1 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.84
配置：SINGLE二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1.1 V最大非重复峰值正向电流：100 A
元件数量：1最高工作温度：150 °C
最大输出电流：3 A最大重复峰值反向电压：50 V
子类别：Rectifier Diodes表面贴装：NO
Base Number Matches：1

GI850/1 数据手册

 浏览型号GI850/1的Datasheet PDF文件第2页 
GI850 thru GI858  
Vishay Semiconductors  
formerly General Semiconductor  
Fast Switching Plastic Rectifier  
Reverse Voltage 500 to 800 V  
Forward Current 3.0 A  
DO-201AD  
Features  
• Plastic package has Underwriters Laboratories  
Flammability Classification 94V-0  
1.0 (25.4)  
MIN.  
• High surge current capability  
• Fast switching for high efficiency  
• Construction utilizes void-free molded plastic technique  
• High forward current operation  
• High temperature soldering guaranteed:  
250°C/10 seconds, 0.375" (9.5mm) lead length,  
5 lbs. (2.3kg) tension  
0.210 (5.3)  
0.190 (4.8)  
DIA.  
0.375 (9.5)  
0.285 (7.2)  
Mechanical Data  
Case: JEDEC DO-201AD, molded plastic body  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
0.052 (1.32)  
1.0 (25.4)  
MIN.  
0.048 (1.22)  
DIA.  
Weight: 0.04 oz., 1.1 g  
Packaging codes/options:  
1/Bulk - 1.5K per container, 15K per box  
4/1.4K per 13" reel, 5.6K per box  
23/1K per Ammo. mag., 9K per box  
Dimensions in inches and (millimeters)  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
VRRM  
VRMS  
VDC  
GI850  
GI851  
100  
70  
GI852  
200  
140  
200  
250  
GI854  
400  
280  
400  
450  
GI856  
600  
420  
600  
650  
GI858  
800  
560  
800  
880  
Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
50  
V
35  
V
Maximum DC blocking voltage  
Maximum non-repetitive peak reverse voltage  
50  
100  
150  
V
VRSM  
75  
V
Maximum average forward rectified current  
0.375" (9.5mm) lead length at TA=90°C  
IF(AV)  
3.0  
A
Peak forward surge current  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
100  
A
Typical thermal resistance (1)  
RΘJA  
RΘJL  
22  
8.0  
°C/W  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-50 to +150  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Maximum instantaneous forward voltage at 3.0A  
1.25  
1.10  
VF  
IR  
trr  
V
9.4A, TJ=175°C  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25°C  
TA=100°C  
10  
µA  
ns  
150  
150  
200  
250  
300  
500  
Maximum reverse recovery time at  
IF=1.0A, VR=30V, di/dt=50A/µs, Irr=10% IRM  
200  
Maximum reverse recovery time at  
IF=1.0A, VR=30V, di/dt=50A/µs, Irr=10% IRM  
IRM(REC)  
CJ  
2.0  
28  
A
Typical junction capacitance at 4.0V, 1MHz  
pF  
Notes: (1) Thermal resistance from junction to ambient and from junction to lead at 0.375” (9.5mm) lead length, with both leads equally heat sink  
Document Number 88630  
22-Mar-02  
www.vishay.com  
1
12

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

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