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GI850/56 PDF预览

GI850/56

更新时间: 2024-11-07 18:28:19
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
4页 293K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

GI850/56 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DO-201AD包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.84其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2JESD-609代码:e0
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-50 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:50 V最大反向恢复时间:0.2 µs
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

GI850/56 数据手册

 浏览型号GI850/56的Datasheet PDF文件第2页浏览型号GI850/56的Datasheet PDF文件第3页浏览型号GI850/56的Datasheet PDF文件第4页 
GI850 thru GI858  
Vishay General Semiconductor  
Fast Switching Plastic Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
3.0 A  
50 V to 800 V  
100 A  
200 ns  
IR  
10 µA  
VF  
1.25 V  
DO-201AD  
Tj max.  
150 °C  
Features  
Mechanical Data  
• Fast switching for high efficiency  
• Low forward voltage drop  
• Low leakage current  
Case: DO-201AD, molded epoxy body  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated (E3 Suffix) leads, solder-  
able per J-STD-002B and JESD22-B102D  
Polarity: Color band denotes cathode end  
• High forward surge capability  
• Solder Dip 260 °C, 40 seconds  
Typical Applications  
For use in fast switching rectification of power supply,  
inverters, converters and freewheeling diodes for  
consumer and Telecommunication.  
(Note: These devices are not Q101 qualified. There-  
fore, the devices specified in this datasheet have not  
been designed for use in automotive or Hi-Rel appli-  
cations.)  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol  
VRRM  
GI850  
50  
GI851  
100  
GI852  
200  
GI854  
400  
GI856  
600  
GI858  
800  
Unit  
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
75  
70  
140  
200  
250  
280  
400  
450  
420  
600  
650  
560  
800  
880  
V
V
V
A
Maximum DC blocking voltage  
Maximum non-repetitive peak reverse voltage  
100  
150  
VRSM  
IF(AV)  
Maximum average forward rectified current 0.375"  
(9.5 mm) lead length at TA= 90 °C  
3.0  
Peak forward surge current 8.3 ms single half sine-  
wave superimposed on rated load  
IFSM  
100  
A
Operating junction and storage temperature range TJ,TSTG  
- 50 to + 150  
°C  
Document Number 88630  
10-Oct-05  
www.vishay.com  
1

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