Datasheet > GI851/72

GI851/72

更新时间： 2024-11-08 04:02:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	293K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

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GI851/72 数据手册

GI850 thru GI858

Vishay General Semiconductor

Fast Switching Plastic Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

t_rr

3.0 A

50 V to 800 V

100 A

200 ns

I_R

10 µA

V_F

1.25 V

DO-201AD

T_jmax.

150 °C

Features

Mechanical Data

• Fast switching for high efficiency

• Low forward voltage drop

• Low leakage current

Case: DO-201AD, molded epoxy body

Epoxy meets UL-94V-0 Flammability rating

Terminals: Matte tin plated (E3 Suffix) leads, solder-

able per J-STD-002B and JESD22-B102D

Polarity: Color band denotes cathode end

• High forward surge capability

• Solder Dip 260 °C, 40 seconds

Typical Applications

For use in fast switching rectification of power supply,

inverters, converters and freewheeling diodes for

consumer and Telecommunication.

(Note: These devices are not Q101 qualified. There-

fore, the devices specified in this datasheet have not

been designed for use in automotive or Hi-Rel appli-

cations.)

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol

V_RRM

GI850

GI851

100

GI852

200

GI854

400

GI856

600

GI858

800

Unit

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RMS

V_DC

140

200

250

280

400

450

420

600

650

560

800

880

Maximum DC blocking voltage

Maximum non-repetitive peak reverse voltage

100

150

V_RSM

I_F(AV)

Maximum average forward rectified current 0.375"

(9.5 mm) lead length at T_A= 90 °C

3.0

Peak forward surge current 8.3 ms single half sine-

wave superimposed on rated load

I_FSM

100

Operating junction and storage temperature range T_J,T_STG

- 50 to + 150

°C

Document Number 88630

10-Oct-05

www.vishay.com

12 3 4

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