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GI851-E3/54 PDF预览

GI851-E3/54

更新时间: 2024-11-30 22:49:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 75K
描述
DIODE GEN PURP 100V 3A DO201AD

GI851-E3/54 数据手册

 浏览型号GI851-E3/54的Datasheet PDF文件第2页浏览型号GI851-E3/54的Datasheet PDF文件第3页浏览型号GI851-E3/54的Datasheet PDF文件第4页 
Not Available for New Designs, Use RGP30A, RGP30B, RGP30D, RGP30G  
GI850, GI851, GI852, GI854, GI856, GI858  
www.vishay.com  
Vishay General Semiconductor  
Fast Switching Plastic Rectifier  
FEATURES  
• Fast switching for high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
DO-201AD  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in fast switching rectification of power supply,  
inverters, converters and freewheeling diodes for consumer  
and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
3.0 A  
Note  
These devices are not AEC-Q101 qualified.  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V  
VRRM  
IFSM  
100 A  
200 ns  
MECHANICAL DATA  
Case: DO-201AD, molded epoxy body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
trr  
IR  
10 μA  
VF  
1.25 V  
TJ max.  
Package  
Diode variation  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
DO-201AD  
Single die  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
GI850  
GI851  
100  
70  
GI852  
200  
GI854  
400  
GI856  
600  
GI858  
800  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
50  
V
V
V
V
VRMS  
35  
140  
280  
420  
560  
Maximum DC blocking voltage  
Maximum non-repetitive peak reverse voltage  
VDC  
50  
100  
150  
200  
400  
600  
800  
VRSM  
75  
250  
450  
650  
880  
Maximum average forward rectified current  
IF(AV)  
IFSM  
3.0  
A
A
0.375" (9.5 mm) lead length at TA = 90 °C  
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
100  
Operating junction and  
storage temperature range  
TJ, TSTG  
-50 to +150  
°C  
Revision: 27-Feb-14  
Document Number: 88630  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

GI851-E3/54 替代型号

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