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GI850/58 PDF预览

GI850/58

更新时间: 2024-12-01 08:11:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 293K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

GI850/58 数据手册

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GI850 thru GI858  
Vishay General Semiconductor  
Fast Switching Plastic Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
3.0 A  
50 V to 800 V  
100 A  
200 ns  
IR  
10 µA  
VF  
1.25 V  
DO-201AD  
Tj max.  
150 °C  
Features  
Mechanical Data  
• Fast switching for high efficiency  
• Low forward voltage drop  
• Low leakage current  
Case: DO-201AD, molded epoxy body  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated (E3 Suffix) leads, solder-  
able per J-STD-002B and JESD22-B102D  
Polarity: Color band denotes cathode end  
• High forward surge capability  
• Solder Dip 260 °C, 40 seconds  
Typical Applications  
For use in fast switching rectification of power supply,  
inverters, converters and freewheeling diodes for  
consumer and Telecommunication.  
(Note: These devices are not Q101 qualified. There-  
fore, the devices specified in this datasheet have not  
been designed for use in automotive or Hi-Rel appli-  
cations.)  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol  
VRRM  
GI850  
50  
GI851  
100  
GI852  
200  
GI854  
400  
GI856  
600  
GI858  
800  
Unit  
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
75  
70  
140  
200  
250  
280  
400  
450  
420  
600  
650  
560  
800  
880  
V
V
V
A
Maximum DC blocking voltage  
Maximum non-repetitive peak reverse voltage  
100  
150  
VRSM  
IF(AV)  
Maximum average forward rectified current 0.375"  
(9.5 mm) lead length at TA= 90 °C  
3.0  
Peak forward surge current 8.3 ms single half sine-  
wave superimposed on rated load  
IFSM  
100  
A
Operating junction and storage temperature range TJ,TSTG  
- 50 to + 150  
°C  
Document Number 88630  
10-Oct-05  
www.vishay.com  
1

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