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GDTSMBJ5.0A PDF预览

GDTSMBJ5.0A

更新时间: 2024-11-01 07:35:19
品牌 Logo 应用领域
固锝 - GOOD-ARK /
页数 文件大小 规格书
8页 841K
描述
Trans Voltage Suppressor Diode, 600W, 5V V(RWM), Unidirectional, Silicon, DIE

GDTSMBJ5.0A 数据手册

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Peak Pulse Power 600W  
Glass Passivated TVS  
Features  
Glass passivated chip  
Low inductance  
Excellent clamping capability  
Very fast response time  
600 W peak pulse power capability  
with a 10/1000 µs waveform  
Compatible with soldering  
Devices for Bidirectional Applications  
For bi-directional devices, use suffix C or CA  
Electrical characteristics apply in both directions.  
Process Details  
Chip Type  
PDPW  
(pcs/4"wafer)  
Sizemil)  
B±2C±2D±1)  
Surface  
Metalization  
A (+1/-2)  
Ni(0.6~1um)/  
Au(0.05um)  
GDTP6KE/SMBJ/P6SMB/SA  
1,601  
80  
13 54 1.5  
Notes: “A” is 88mil when Breakdown Voltage is 250 Volts and more.  
Maximum Ratings & Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol  
VALUE  
600  
UNIT  
(P6KE/SMBJ/P6SMB)  
Peak pulse power dissipation with a 10/1000µs waveform  
(see fig. 1)  
PPPM  
W
500  
(SA)  
Peak pulse current with a waveform (see fig. 3 , single  
pulse)  
IPPM  
See Next Table  
A
1. Non-repetitive current pulse, per Fig.3 and derated above TA=25per Fig. 2  
1/8  

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