Datasheet > GDU91-20222

GDU91-20222

更新时间： 2024-09-12 22:32:39

品牌	Logo	应用领域
DYNEX		栅极栅极驱动
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4页	39K
描述
Gate Drive Unit

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数据手册

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GDU91-20222 数据手册

GDU 91 20222

GDU 91-20222

Gate Drive Unit

Replaces March 1998 version, DS4570-3.1

DS4570-4.0 January 2000

This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.

APPLICATIONS

KEY PARAMETERS

I_FGM

I_G(ON)

dI_GQ/dt

30A

30A/µs

■ Used with Gate Turn-Off Thyristors in high current switching

applications

CONDITIONS - (UNLESS STATED OTHERWISE)

V₁= +5V

Test circuit GTO

V₂= +15V

DG408BP

V₃= -15V

GDU connection to GTO

500mm CO - AX cable type RC5327230

Honeywell sweetspot HFE 4020 - 013

30mA

Test circuit emitter and gate drive emitter

Test circuit emitter current

Test circuit receiver and gate drive receiver

Honeywell sweetspot HFD 3029 - 002

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

+5V PSU current

Conditions

Min.

Typ.

Max. Units

500Hz, 50% duty cycle

I_V1

I_V2

2.2

+15V PSU current

-15V PSU current

500Hz

0.55

500Hz, I_T= 1000A

GTO T_j= 125˚C

I_V3

3.0

3.8

14.0

V_1(Min)

V_2(Min)

V_3(Min)

I_FGM

+5V PSU minimum

+15V PSU minimum

-15V PSU minimum

Peak forward gate current

On-state gate current

I_G(ON)

Measured 10 - 75% I_FGM

I_T= 1000A, 90% I_G(ON)- 50% I_GQM

A/µs

dI_FG/dt

dI_GQ/dt

Rate of rise of positive gate current

Rate of rise of negative gate current

1/4

12 3 4

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