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GDU90-20302 PDF预览

GDU90-20302

更新时间: 2024-10-30 22:29:59
品牌 Logo 应用领域
DYNEX 栅极栅极驱动
页数 文件大小 规格书
4页 41K
描述
Gate Drive Unit

GDU90-20302 数据手册

 浏览型号GDU90-20302的Datasheet PDF文件第2页浏览型号GDU90-20302的Datasheet PDF文件第3页浏览型号GDU90-20302的Datasheet PDF文件第4页 
GDU 90-20302  
Gate Drive Unit  
Replaces March 1998 version, DS4560-3.1  
DS4560-4.0 January 2000  
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.  
KEY PARAMETERS  
APPLICATIONS  
IFGM  
IG(ON)  
dIGQ/dt  
40A  
8A  
40A/µs  
Used with Gate Turn-Off Thyristors in high current switching  
applications  
CONDITIONS - (UNLESS STATED OTHERWISE)  
V1 = +5V  
Test circuit GTO  
V2 = +15V  
DG758BX  
V3 = -15V  
GDU connection to GTO  
500mm CO - AX cable type RC5327230  
Honeywell sweetspot HFE 4020 - 013  
30mA  
Test circuit emitter and gate drive emitter  
Test circuit emitter current  
Test circuit receiver and gate drive receiver  
Honeywell sweetspot HFD 3029 - 002  
ELECTRICAL CHARACTERISTICS  
Min.  
Symbol  
Parameter  
+5V PSU current  
Conditions  
Typ.  
Max. Units  
500Hz, 50% duty cycle  
IV1  
IV2  
4.40  
0.48  
A
A
-
-
-
-
+15V PSU current  
-15V PSU current  
500Hz  
500Hz, IT = 3000A  
GTO Tj= 125˚C  
IV3  
10.0  
A
-
3.8  
14.0  
14.0  
40  
-
-
-
V
V
V1(Min)  
V2(Min)  
V3(Min)  
IFGM  
+5V PSU minimum  
-
-
-
-
-
-
-
-
+15V PSU minimum  
-
-
-15V PSU minimum  
V
-
-
Peak forward gate current  
On-state gate current  
A
-
-
-
IG(ON)  
8
A
dIFG/dt  
dIGQ/dt  
Rate of rise of positive gate current  
Rate of rise of negative gate current  
Measured 10 - 75% IFGM  
IT = 3000A, 90% IG(ON) - 50% IGQM  
40  
40  
A/µs  
A/µs  
-
-
1/4  

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