Datasheet > GDU91-20221

GDU91-20221

更新时间： 2024-10-30 22:32:39

品牌	Logo	应用领域
DYNEX		栅极栅极驱动
页数	文件大小	规格书
4页	39K
描述
Gate Drive Unit

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中文翻译

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数据手册

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GDU91-20221 数据手册

GDU 91 20221

GDU 91-20221

Gate Drive Unit

Replaces March 1998 version, DS4569-3.1

DS4569-4.0 January 2000

This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.

APPLICATIONS

KEY PARAMETERS

I_FGM

I_G(ON)

30A

■ Used with Gate Turn-Off Thyristors in high current switching

applications

dI_GQ/dt

30A/µs

CONDITIONS - (UNLESS STATED OTHERWISE)

V₁= +5V

Test circuit GTO

V₂= +15V

DG408BP

V₃= -15V

GDU connection to GTO

500mm CO - AX cable type RC5327230

Hewlett Packard versatile link HFBR1524

30mA

Test circuit emitter and gate drive emitter

Test circuit emitter current

Test circuit receiver and gate drive receiver

Hewlett Packard versatile link HFBR2524

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

+5V PSU current

Conditions

Min.

Typ.

Max. Units

500Hz, 50% duty cycle

I_V1

I_V2

2.2

+15V PSU current

-15V PSU current

500Hz

0.55

500Hz, I_T= 1000A

GTO T_j= 125˚C

I_V3

3.0

3.8

14.0

V_1(Min)

V_2(Min)

V_3(Min)

I_FGM

+5V PSU minimum

+15V PSU minimum

-15V PSU minimum

Peak forward gate current

On-state gate current

I_G(ON)

dI_FG/dt

dI_GQ/dt

Rate of rise of positive gate current

Rate of rise of negative gate current

Measured 10 - 75% I_FGM

I_T= 1000A, 90% I_G(ON)- 50% I_GQM

A/µs

1/4

12 3 4

中文翻译

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