GD1600SGT170C3S PDF预览

GD1600SGT170C3S

更新时间: 2025-07-18 17:01:43
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
6页 274K
描述
C3.0.Single

GD1600SGT170C3S 数据手册

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GD1600SGT170C3S  
IGBT Module  
STARPOWER  
SEMICONDUCTORTM  
IGBT  
GD1600SGT170C3S  
Preliminary  
Molding Type Module  
1700V/1600A 1 in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
general inverters and UPS.  
Features  
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Low VCE(sat) trench IGBT technology  
10μs short circuit capability  
VCE(sat) with positive temperature coefficient  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
External Connection(to be done)  
Equivalent Circuit Schematic  
Typical Applications  
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AC inverter drives  
Switching mode power supplies  
Electronic welders  
©2009 STARPOWER Semiconductor Ltd.  
12/9/2009  
1/6  
Preliminary  

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