Datasheet > GD160TLT120F6S

GD160TLT120F6S

更新时间： 2024-09-26 17:01:55

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GD160TLT120F6S 数据手册

GD160TLT120F6S

IGBT Module

STARPOWER

SEMICONDUCTOR

IGBT

GD160TLT120F6S

1200V/160A 3-level in one-package

General Description

STARPOWER IGBT Power Module provides ultra

low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as

UPS and solar power.

Features



Low V_CE(sat)Trench IGBT technology

Low switching loss

_CE(sat)with positive temperature coefficient

High short circuit capability

Maximum junction temperature 175^oC

Low inductance case

Fast & soft reverse recovery anti-parallel FWD

Typical Applications



3-level-applications

Uninterruptible power supply

Solar Power

Equivalent Circuit Schematic

11/21/2014

1/18

IX0A

12 3 4 5 6 7...18

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