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GBU1010-G PDF预览

GBU1010-G

更新时间: 2024-01-22 13:57:42
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
3页 83K
描述
RECT BRIDGE GPP 1000V 10A GBU

GBU1010-G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSIP-T4Reach Compliance Code:compliant
风险等级:1.67其他特性:UL RECOGNIZED
最小击穿电压:1000 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSIP-T4最大非重复峰值正向电流:220 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:1000 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

GBU1010-G 数据手册

 浏览型号GBU1010-G的Datasheet PDF文件第2页浏览型号GBU1010-G的Datasheet PDF文件第3页 
Glass Passivated Bridge Rectifiers  
GBU10005-G Thru. GBU1010-G  
Reverse Voltage: 50 to 1000V  
Forward Current: 10A  
RoHS Device  
GBU  
Backside  
Features  
-Surge overload rating -220 amperes peak.  
0.437(11.1)  
0.430(10.9)  
0.139(3.53)  
0.133(3.37)  
0.874(22.2)  
0.860(21.8)  
0.126(3.2)*45°  
-Ideal for printed circuit board.  
Chamfer  
0.161(4.1)  
0.134(3.4)  
-UL recognized file # E349301  
R
0.232(5.90)  
0.213(5.40)  
0.752(19.1)  
0.720(18.3)  
0.401(10.2)  
0.073(1.85)  
0.057(1.45)  
0.392(9.80)  
Mechanical Data  
0.100(2.54)  
0.085(2.16)  
0.720(18.29)  
0.680(17.27)  
0.106(2.7)  
-Epoxy: UL 94V-0 rate flame retardant.  
-Case: Molded plastic, GBU  
-Mounting position: Any  
0.091(2.3)  
0.080(2.03)  
0.065(1.65)  
0.047(1.2)  
0.035(0.9)  
0.022(0.56)  
0.018(0.46)  
0.210(5.3)  
0.190(4.8)  
0.210(5.3)  
0.190(4.8)  
-Weight: 3.91 grams (approx.).  
0.210(5.3)  
0.190(4.8)  
Dimensions in inches and (millimeter)  
Maximum ratings and electrical characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
GBU  
GBU  
GBU  
GBU  
GBU  
GBU  
GBU  
Symbol  
Parameter  
Unit  
10005-G 1001-G 1002-G 1004-G 1006-G 1008-G 1010-G  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
RRM  
RMS  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
V
Maximum DC Blocking Voltage  
V
DC  
100  
1000  
10.0  
3.0  
Maximum Average Forward (With heatsink Note2)  
Rectified Current @Tc=100°C (without heatsink)  
I
(AV)  
A
A
Peak Forward Surge Current, 8.3ms Single  
Half Sine-Wave Super Imposed On Rated  
Load (JEDEC Method)  
IFSM  
220  
Maximum Forward Voltage at 5.0A DC  
VF  
1.0  
V
@TJ=25°C  
@TJ=125°C  
10.0  
500  
Maximum DC Reverse Current  
At Rate DC Blocking Voltage  
μA  
IR  
I2 T Rating for Fusing(t<8.3ms)  
A2s  
pF  
I2t  
200  
Typical Junction Capacitance Per Element  
(Note 1)  
C
J
70  
Typical Thermal Resistance  
Operating Temperature Range  
R
θJC  
2.2  
°C/W  
°C  
-55 to +150  
-55 to +150  
T
J
Storage Temperature Range  
Notes:  
TSTG  
°C  
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2. Device mounted on 100mm*100mm*1.6mm Cu plate heatsink.  
Company reserves the right to improve product design , functions and reliability without notice.  
REV: C  
Page 1  
QW-BBR84  
Comchip Technology CO., LTD.  

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