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GBU10A-B PDF预览

GBU10A-B

更新时间: 2024-11-05 19:28:23
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 111K
描述
Rectifier Diode,

GBU10A-B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.92JESD-609代码:e0
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

GBU10A-B 数据手册

 浏览型号GBU10A-B的Datasheet PDF文件第2页浏览型号GBU10A-B的Datasheet PDF文件第3页 
GBU10A  
THRU  
GBU10M  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
10 Amp Single Phase  
Glass Passivated  
Bridge Rectifiers  
50 to 1000 Volts  
xꢀ Glass Passivated Chip junction  
xꢀ High Surge Overload Rating  
xꢀ UL Recognized File # E165989  
xꢀ  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
x
Marking : type number  
Maximum Ratings  
GBU  
xꢀ Operating Temperature: -55к to +150к  
xꢀ Storage Temperature: -55к to +150к  
xꢀ Typical Thermal Resistance:2.2к/W Junction to Case(Heatsink)  
Maximum  
Recurrent  
Maximum DC  
Blocking  
Voltage  
MCC  
Maximum  
3.2x45  
A
C
Part Number Peak Reverse RMS Voltage  
Voltage  
N
N
N
I
G
K
H
GBU10A  
GBU10B  
GBU10D  
GBU10G  
GBU10J  
GBU10K  
GBU10M  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
B
J
1.90 RADIUS  
N
-
+
~
~
140V  
280V  
420V  
560V  
700V  
D
L
E
M
F
Electrical Characteristics @ 25к Unless Otherwise Specified  
Maximum Average  
Forward Current  
(with heatsink Note  
1)  
TC = 100к  
IF(AV)  
10 A  
DIMENSIONS  
INCHES  
MM  
MIN  
21.80  
18.30  
3.30  
17.50  
0.76  
0.46  
Peak Forward Surge  
Current  
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
DIM  
A
B
C
D
E
F
G
H
I
J
MIN  
.860  
.720  
.130  
.690  
.030  
.018  
.290  
.140  
.065  
.089  
.077  
.040  
.190  
MAX  
.880  
.740  
.140  
.710  
.039  
.022  
.310  
.160  
MAX  
22.30  
18.80  
3.56  
NOTE  
IFSM  
200A  
1.1V  
8.3ms, half sine  
18.00  
1.00  
0.56  
7.90  
4.10  
2.16  
2.75  
2.35  
1.27  
5.33  
At 5A DC  
VF  
7.40  
3.50  
TA = 25к  
5.0uA  
500uA  
.085  
.108  
.093  
.050  
.210  
1.65  
2.25  
1.95  
1.02  
4.83  
IR  
TA = 125к  
K
L
M
N
Typical Junction  
Capacitance  
I2t Rating for Fusing  
Measured at  
1.0MHz, VR=4.0V  
200A2S t<8.3ms  
CJ  
I2t  
70pF  
7.0 TYPICAL  
Note:1.Device mounted on 100mm × 100mm × 1.6mm Cu Plate  
Heatsink  
www.mccsemi.com  
1 of 3  
Revision: 4  
2007/01/16  

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