Datasheet > GBU10A

GBU10A

更新时间： 2024-09-29 12:46:19

品牌	Logo	应用领域
亞昕 - YEASHIN		二极管
页数	文件大小	规格书
2页	403K
描述
10 Amp Single Phase Glass Passivated Bridge Rectifiers 50 to 1000 Volts

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中文翻译

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数据手册

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GBU10A 数据手册

DATA SHEET

SEMICONDUCTOR

GBU10A THRU GBU10M

10 Amp Single Phase

Glass Passivated

Bridge Rectifiers 50 to 1000 Volts

GBU

Unit:inch(mm)

FEATURES

0.140 (3.56)

0.130 (3.30)

0.880 (22.3)

0.860 (21.8)

0.020 R (TYP.)

‧ Plastic Material has Underwriters Laboratory

‧ Glass Passivated Chip junction

0.125 (3.2) x 45^o

CHAMFER

9^o

TYP.

0.160 (4.1)

0.140 (3.5)

0.310 (7.9)

0.290 (7.4)

‧ High Surge Overload Rating

0.740 (18.8)

0.720 (18.3)

‧ Reliable Low Cost Construction Utilizing Molded Plastic Technique

‧ High temperature soldering : 260^OC / 10 seconds at terminals

‧ Pb free product at available : 99% Sn above meet RoHS

environment substance directive request

0.075

0.085 (2.16)

0.065 (1.65)

(2.03)

(1.52)

0.080

0.060

(1.9)

5^o

TYP.

0.085 (2.16)

0.075 (1.90)

0.710 (18.0)

0.690 (17.5)

Maximum Ratings

0.100 (2.54)

0.085 (2.16)

0.050 (1.27)

0.040 (1.02)

‧ Operating Temperature: -55℃ to +150℃

‧ Storage Temperature: -55℃ to +150℃

‧ Typical Thermal Resistance:2.2℃/W Junction to Case(Heatsink)

0.022 (0.56)

0.018 (0.46)

(4.83)

(5.33)

0.080 (2.03)

0.065 (1.65)

0.190

0.210

Maximum

Maximum DC

MCC

Recurrent

Peak Reverse

Voltage

50V

Maximum

Dimensions in inches and (millimeters)

Blocking

Voltage

Part Number

RMS Voltage

GBU10A

GBU10B

GBU10D

GBU10G

GBU10J

GBU10K

GBU10M

35V

70V

50V

100V

200V

400V

600V

800V

1000V

100V

200V

140V

280V

420V

560V

700V

400V

600V

800V

1000V

Electrical Characteristics @ 25℃ Unless Otherwise Specified

Maximum Average

Forward Current

(with heatsink Note1)

Peak Forward Surge

Current

IF(AV)

10 A

TA = 100℃

IFSM

200A

1.1V

8.3ms, half sine

Maximum

At 5.0/7.5/12.5/

17.5A DC

Instantaneous

Forward Voltage

Maximum DC

5.0uA

TA = 25℃

Reverse Current At

Rated DC Blocking

Voltage

500uA

TA = 125℃

Typical Junction

Capacitance

I2t

70pF

Measured at

1.0MHz,

VR=4.0V

I2t Rating for Fusing

200A2S t<8.3ms

Note:1.Device mounted on 100mm × 100mm × 1.6mm Cu Plate Heatsink

http://www.yeashin.com

REV.02 20120305

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