Datasheet > GBJ5006L-GBJ-T

GBJ5006L-GBJ-T

更新时间： 2024-02-05 09:24:42

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描述
Rectifier Diode,

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技术参数
数据手册

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GBJ5006L-GBJ-T 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.69	Base Number Matches：	1

GBJ5006L-GBJ-T 数据手册

GBJ5006

SCHOTTKY BRIDGE



ABSOLUTE MAXIMUM RATINGS (T_A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_RRM

RATINGS

600

UNIT

Repetitive Peak Reverse Voltage

T_A=25°C

T_C=87°C

5.2

Average Forward Rectified Current

I_F(AV)

I_FSM

I²t

Peak Forward Surge Current, 8.3ms Single Half Sine-Wave

Superimposed on Rated Load

450

830

2.5

A²s

Current squared time

@1ms≤t≤8.3ms Tj=25°C, Rating of per diode

Dielectric strength

@ terminals to case, AC 1 minute

V_DIS

T_OR

Mounting torque

kg·cm

@recommend torque：5kg·cm

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

°C

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

UNIT

°С/W

Junction to Ambient

Junction to Case

θ_JC

0.8



ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_F

TEST CONDITIONS

I_F=25A

MIN TYP MAX UNIT

Instantaneous Forward Voltage

DC Reverse Current at Rated DC Blocking

Voltage

1.0

I_RRM

V_RM=V_RRM

5.0

μA

UNISONICTECHNOLOGIESCO.,LTD

www.unisonic.com.tw

2 of 3

QW-R202-073.A

123

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