Datasheet > GBJ5010

GBJ5010

更新时间： 2024-02-03 13:46:09

品牌	Logo	应用领域
佑风微 - YFW		/
页数	文件大小	规格书
2页	629K
描述
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

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技术参数
数据手册

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GBJ5010 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.74	其他特性：	UL RECOGNIZED
最小击穿电压：	1000 V	配置：	BRIDGE, 4 ELEMENTS
二极管元件材料：	SILICON	二极管类型：	BRIDGE RECTIFIER DIODE
JESD-30 代码：	R-XSFM-T4	湿度敏感等级：	1
最大非重复峰值正向电流：	400 A	元件数量：	4
相数：	1	端子数量：	4
最高工作温度：	150 °C	最低工作温度：	-55 °C
最大输出电流：	50 A	封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
最大重复峰值反向电压：	1000 V	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
Base Number Matches：	1

GBJ5010 数据手册

GBJ5005 THRU GBJ5010

GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

REVERSE VOLTAGE:

FORWARD CURRENT:

50 to 1000 VOLTS

50.0 AMPERE

FEATURES

· Glass passivated chip junction

· Reliable low cost construction utilizing molded

plastic technique

GBJ

· Ideal for printed circuit board

· Low forward voltage drop

· Low reverse leakage current

· High surge current capability

MECHANICAL DATA

Case: Molded plastic, GBJ

Epoxy: UL 94V-O rate flame retardant

Terminals: Leads solderable per MIL-STD-202,

method 208 guaranteed

Dimensions in inches and (millimeters)

Mounting position: Any

Weight: 0.23ounce, 6.6gram

Maximum Ratings and Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60H_Z, resistive or inductive load.

For capacitive load, derate current by 20%.

GBJ5005 GBJ5001 GBJ5002 GBJ5004 GBJ5006 GBJ5008 GBJ5010

Symbols

Units

Volts

V_RRM

V_RMS

V_DC

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

with Heatsink at T_C=100℃

100

1000

I_(AV)

Amp

50.0

400

1.1

Peak Forward Surge Current,

I_FSM

Amp

8.3ms single half-sine-wave

superimposed on rated load (JEDEC method)

Maximum Forward Voltage Drop per Element

at 12.5A DC and 25℃

V_F

I_R

Volts

at T_A=25℃

T_A=125℃

10.0

500

Maximum Reverse Current

at Rated DC Blocking Voltage

uAmp

C_J

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Operating and Storage Temperature Range

℃/W

℃

R_θJC

0.6

-55 to +150

T_J，Tstg

NOTES:

1- Measured at 1 MH_Zand applied reverse voltage of 4.0 VDC.

2- Thermal Resistance fromn Junction to Case with Device Mounted on 300mm x 300mm x 1.6mmCu Plate Heatsink.

www.yfwdiode.com

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