5秒后页面跳转
GBJ5010-BP PDF预览

GBJ5010-BP

更新时间: 2024-01-02 15:00:31
品牌 Logo 应用领域
美微科 - MCC 局域网二极管
页数 文件大小 规格书
3页 328K
描述
Bridge Rectifier Diode,

GBJ5010-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:2.28
其他特性:UL RECOGNIZED最小击穿电压:1000 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSFM-T4最大非重复峰值正向电流:400 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:50 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:1000 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

GBJ5010-BP 数据手册

 浏览型号GBJ5010-BP的Datasheet PDF文件第2页浏览型号GBJ5010-BP的Datasheet PDF文件第3页 
M C C  
GBJ50005  
THRU  
R
Micro Commercial Components  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
GBJ5010  
50 Amp  
Features  
Lead Free Finish/RoHS Compliant (NOTE 1)("P" Suffix  
designates RoHS Compliant. See ordering information)  
Glass Passivated  
Bridge Rectifier  
50 to 1000 Volts  
Low forward voltage drop, high current capability.  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Ideal for printed circuit board  
Maximum Ratings  
GBJ  
Mounting Torgue: 5 in-lbs Maximum  
I
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
UL Recognized File # E165989  
A
H
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Reccurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
G
B
D
E
K
+
F
GBJ50005  
GBJ5001  
GBJ5002  
GBJ5004  
GBJ5006  
GBJ5008  
GBJ5010  
35V  
70V  
GBJ50005  
GBJ5001  
GBJ5002  
GBJ5004  
GBJ5006  
GBJ5008  
GBJ5010  
100V  
200V  
400V  
600V  
800V  
1000V  
100V  
P
140V  
280V  
420V  
560V  
700V  
200V  
400V  
600V  
800V  
C
L
M
1000V  
J
N
O
O
DIMENSIONS  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
INCHES  
MM  
DIM  
A
B
C
D
E
F
G
H
I
MIN  
1.170  
.780  
.670  
.019  
.430  
.090  
.120  
.130  
.170  
.100  
.020  
.080  
.040  
.390  
MAX  
1.190  
.800  
.710  
.019  
.440  
.110  
.130  
.150  
.190  
.110  
.030  
.090  
.040  
.400  
MIN  
29.70  
19.70  
17.00  
4.70  
10.80  
2.30  
3.10  
3.40  
4.40  
2.50  
0.60  
2.00  
0.90  
9.80  
MAX  
NOTE  
Average Forward  
Current  
IF(AV)  
50 A  
Tc = 100°C  
30.30  
20.30  
18.00  
4.90  
11.20  
2.70  
3.40  
3.80  
4.80  
2.90  
0.80  
2.40  
1.10  
10.20  
7.70  
4.20  
Peak Forward Surge  
Current  
400A  
8.3ms, sine wave  
IFSM  
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
IFM = 25 A  
TJ = 25°C  
VF  
IR  
1.1V  
J
K
L
M
N
O
P
10 µA TJ = 25°C  
.290  
.150  
.300  
.170  
7.30  
3.80  
Typical thermal  
resistance  
RthJC  
0.8 /W  
°C  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7  
~
~
Case Type  
www.mccsemi.com  
1 of 3  
Revision: B  
2016/02/16  

与GBJ5010-BP相关器件

型号 品牌 描述 获取价格 数据表
GBJ5010-BP-HF MCC Bridge Rectifier Diode,

获取价格

GBJ5010D YANGJIE 6KBJ

获取价格

GBJ5010H NELLSEMI Glass Passivated Single-Phase Bridge Rectifier

获取价格

GBJ5010S MCC

获取价格

GBJ5012 NELLSEMI Glass Passivated Single-Phase Bridge Rectifier

获取价格

GBJ5012H NELLSEMI Glass Passivated Single-Phase Bridge Rectifier

获取价格