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GBJ5008

更新时间: 2024-01-24 06:44:00
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页数 文件大小 规格书
2页 853K
描述
Voltage 50V ~ 1000V 50.0 Amp Glass Passivited Bridge Rectifiers

GBJ5008 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.73其他特性:UL RECOGNIZED
最小击穿电压:800 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-XSFM-T4湿度敏感等级:1
最大非重复峰值正向电流:400 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:50 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
最大重复峰值反向电压:800 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

GBJ5008 数据手册

 浏览型号GBJ5008的Datasheet PDF文件第2页 
GBJ50005 ~ GBJ5010  
Voltage 50V ~ 1000V  
50.0 Amp Glass Passivited Bridge Rectifiers  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
GBJ  
FEATURES  
Rating to 1000V PRV  
Ideal for printed circuit board  
Low forward voltage drop, high current capability  
Reliable low cost construction utilizing molded plastic  
technique results in inexpensive product  
The plastic material has Underwriters Laboratory  
flammability classification 94V-0  
Millimeter  
Millimeter  
Min. Max.  
REF.  
REF.  
Min.  
Max.  
30.3  
20.3  
4.8  
A
B
C
D
29.7  
19.7  
4.4  
J
K
L
0.6  
7.3  
2.0  
9.8  
0.8  
7.7  
2.4  
17.0  
18.0  
M
10.2  
E
F
3.0 x 45°  
N
P
Q
R
S
2.3  
3.6  
2.7  
4.2  
3.1  
-
3.4  
5.1  
2.9  
1.1  
G
H
10.8  
3.1  
11.2  
3.4  
2.5  
0.9  
I
3.4  
3.8  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.  
For capacitive load, de-rate current by 20%.)  
Part Number  
Parameter  
Symbol  
Unit  
GBJ  
50005  
GBJ  
5001  
GBJ  
5002  
GBJ  
5004  
GBJ  
5006  
GBJ  
5008  
GBJ  
5010  
1000  
700  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Bridge Input Voltage  
V
V
V
100  
1000  
Maximum DC Blocking Voltage  
Maximum Average Forward (with heat sink2)  
I(AV)  
50  
A
Rectified Current @TC=100°C (without heat sink)  
Peak Forward Surge Current 8.3 ms Single Half  
Sine-Wave Super Imposed on Rated Load  
(JEDEC Method)  
IFSM  
VF  
IR  
400  
A
V
Maximum Forward Voltage @ 25A DC  
1.1  
10.0  
TJ=25°C  
Maximum DC Reverse Current  
µA  
at Rated DC Blocking Voltage  
TJ=125°C  
500  
I2t Rating for Fusing (t<8.3ms)  
Typical Thermal Resistance 1  
I2t  
660  
A2s  
°C/W  
°C  
RθJC  
1.5  
Operating and Storage temperature range  
TJ,TSTG  
-55~150  
Notes  
1. Thermal resistance from junction to case with units mounted on heat sink.  
2. Device mounted on 300mm*300mm*1.6mm Cu plate heat sink.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
19-Oct-2011 Rev. A  
Page 1 of 2  

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