GAL22V10B-20LPI

更新时间： 2024-09-20 22:51:03

品牌	Logo	应用领域
莱迪思 - LATTICE		/
页数	文件大小	规格书
29页	387K
描述
High Performance E2CMOS PLD Generic Array Logic

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中文翻译

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数据手册

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GAL22V10B-20LPI 数据手册

Specifications GAL22V10

GAL22V10

High Performance E²CMOS PLD

Generic Array Logic™

Functional Block Diagram

Features

• HIGH PERFORMANCE E²CMOS^®TECHNOLOGY

— 4 ns Maximum Propagation Delay

— Fmax = 250 MHz

RESET

I/CLK

OLMC

I/O/Q

— 3.5 ns Maximum from Clock Input to Data Output

— UltraMOS^®Advanced CMOS Technology

• ACTIVE PULL-UPS ON ALL PINS

• COMPATIBLE WITH STANDARD 22V10 DEVICES

— Fully Function/Fuse-Map/Parametric Compatible

with Bipolar and UVCMOS 22V10 Devices

I/O/Q

• 50% to 75% REDUCTION IN POWER VERSUS BIPOLAR

— 90mA Typical Icc on Low Power Device

— 45mA Typical Icc on Quarter Power Device

• E²CELL TECHNOLOGY

— Reconfigurable Logic

— Reprogrammable Cells

— 100% Tested/100% Yields

— High Speed Electrical Erasure (<100ms)

— 20 Year Data Retention

I/O/Q

• TEN OUTPUT LOGIC MACROCELLS

— Maximum Flexibility for Complex Logic Designs

I/O/Q

• PRELOAD AND POWER-ON RESET OF REGISTERS

— 100% Functional Testability

• APPLICATIONS INCLUDE:

— DMA Control

— State Machine Control

— High Speed Graphics Processing

— Standard Logic Speed Upgrade

• ELECTRONIC SIGNATURE FOR IDENTIFICATION

ESCRIPTION

PRESET

Pin Configuration

Description

DIP

The GAL22V10, at 4ns maximum propagation delay time, combines

a high performance CMOS process with Electrically Erasable (E²)

floating gate technology to provide the highest performance avail-

able of any 22V10 device on the market. CMOS circuitry allows

the GAL22V10 to consume much less power when compared to

bipolar 22V10 devices. E²technology offers high speed (<100ms)

erase times, providing the ability to reprogram or reconfigure the

device quickly and efficiently.

PLCC

Vcc

I/CLK

I/O/Q

GAL

22V10

The generic architecture provides maximum design flexibility by

allowing the Output Logic Macrocell (OLMC) to be configured by

the user. The GAL22V10 is fully function/fuse map/parametric com-

patible with standard bipolar and CMOS 22V10 devices.

GAL22V10

Top View

I/O/Q

Unique test circuitry and reprogrammable cells allow completeAC,

DC, and functional testing during manufacture. As a result, Lat-

tice Semiconductor delivers 100% field programmability and func-

tionality of all GAL products. In addition, 100 erase/write cycles and

data retention in excess of 20 years are specified.

GND

to change without notice.

LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.

Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com

August 2000

22v10_06

12 3 4 5 6 7...29

中文翻译

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与GAL22V10B-20LPI相关器件

型号	品牌	获取价格	描述	数据表
GAL22V10B-20LR/883	ETC	获取价格	Electrically-Erasable PLD
GAL22V10B-25LD/883	ETC	获取价格	Electrically-Erasable PLD
GAL22V10B-25LJ	LATTICE	获取价格	High Performance E2CMOS PLD Generic Array Logic
GAL22V10B-25LJI	LATTICE	获取价格	High Performance E2CMOS PLD Generic Array Logic
GAL22V10B-25LP	LATTICE	获取价格	High Performance E2CMOS PLD Generic Array Logic
GAL22V10B-25LPI	LATTICE	获取价格	High Performance E2CMOS PLD Generic Array Logic
GAL22V10B-25QJ	LATTICE	获取价格	High Performance E2CMOS PLD Generic Array Logic
GAL22V10B-25QP	LATTICE	获取价格	High Performance E2CMOS PLD Generic Array Logic
GAL22V10B-30LD/883	ETC	获取价格	Electrically-Erasable PLD
GAL22V10B-7LJ	LATTICE	获取价格	High Performance E2CMOS PLD Generic Array Logic

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