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GAL16V8D25LP PDF预览

GAL16V8D25LP

更新时间: 2024-11-07 23:53:35
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22页 308K
描述
IC-CMOS PLD

GAL16V8D25LP 数据手册

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GAL16V8  
High Performance E2CMOS PLD  
Generic Array Logic™  
Features  
Functional Block Diagram  
HIGH PERFORMANCE E2CMOS® TECHNOLOGY  
3.5 ns Maximum Propagation Delay  
Fmax = 250 MHz  
I/CLK  
CLK  
3.0 ns Maximum from Clock Input to Data Output  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
8
8
OLMC  
UltraMOS® Advanced CMOS Technology  
I
I
I
I
I
I
I
I
50% to 75% REDUCTION IN POWER FROM BIPOLAR  
75mA Typ Icc on Low Power Device  
45mA Typ Icc on Quarter Power Device  
OLMC  
OLMC  
OLMC  
OLMC  
OLMC  
OLMC  
OLMC  
ACTIVE PULL-UPS ON ALL PINS  
E2 CELL TECHNOLOGY  
Reconfigurable Logic  
Reprogrammable Cells  
100% Tested/100% Yields  
High Speed Electrical Erasure (<100ms)  
20 Year Data Retention  
8
8
8
8
8
8
EIGHT OUTPUT LOGIC MACROCELLS  
Maximum Flexibility for Complex Logic Designs  
Programmable Output Polarity  
Also Emulates 20-pin PAL® Devices with Full  
Function/Fuse Map/Parametric Compatibility  
PRELOAD AND POWER-ON RESET OF ALL REGISTERS  
100% Functional Testability  
APPLICATIONS INCLUDE:  
DMA Control  
State Machine Control  
High Speed Graphics Processing  
Standard Logic Speed Upgrade  
I/O/Q  
I/OE  
OE  
ELECTRONIC SIGNATURE FOR IDENTIFICATION  
Description  
Pin Configuration  
The GAL16V8, at 3.5 ns maximum propagation delay time, com-  
bines a high performance CMOS process with Electrically Eras-  
able (E2) floating gate technology to provide the highest speed  
performance available in the PLD market. High speed erase times  
(<100ms) allow the devices to be reprogrammed quickly and ef-  
ficiently.  
DIP  
1
20  
Vcc  
I/CLK  
PLCC  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/OE  
I
I
I
I/CLK Vcc I/O/Q  
20  
I
I
2
The generic architecture provides maximum design flexibility by  
allowing the Output Logic Macrocell (OLMC) to be configured by  
the user. An important subset of the many architecture configura-  
tions possible with the GAL16V8 are the PAL architectures listed  
in the table of the macrocell description section. GAL16V8 devices  
are capable of emulating any of these PAL architectures with full  
function/fuse map/parametric compatibility.  
GAL  
18  
I/O/Q  
4
6
I
16V8  
I/O/Q  
I/O/Q  
I
GAL16V8  
Top View  
5
I
I
16  
I
15  
I/O/Q  
I/O/Q  
I
I
I
14  
I
8
9
I
11  
13  
Unique test circuitry and reprogrammable cells allow completeAC,  
DC, and functional testing during manufacture. As a result, Lattice  
Semiconductor delivers 100% field programmability and function-  
ality of all GAL products. In addition, 100 erase/write cycles and  
data retention in excess of 20 years are specified.  
GND I/OE I/O/Q I/O/Q  
I
10  
11  
GND  
Copyright © 2000 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject  
to change without notice.  
LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.  
Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com  
August 2000  
1
16v8_07  

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