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GAL16V8D-25QPI PDF预览

GAL16V8D-25QPI

更新时间： 2024-11-07 22:18:43
品牌 Logo 应用领域
莱迪思 - LATTICE /
页数 文件大小 规格书
22页 315K
描述
High Performance E2CMOS PLD Generic Array Logic

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中文翻译

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GAL16V8D-25QPI 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：DIP
包装说明：PLASTIC, DIP-20针数：20
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.15
架构：PAL-TYPE最大时钟频率：37 MHz
JESD-30 代码：R-PDIP-T20JESD-609代码：e0
长度：26.162 mm专用输入次数：8
I/O 线路数量：8输入次数：18
输出次数：8产品条款数：64
端子数量：20最高工作温度：85 °C
最低工作温度：-40 °C组织：8 DEDICATED INPUTS, 8 I/O
输出函数：MACROCELL封装主体材料：PLASTIC/EPOXY
封装代码：DIP封装等效代码：DIP20,.3
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：225电源：5 V
可编程逻辑类型：EE PLD传播延迟：25 ns
认证状态：Not Qualified座面最大高度：5.334 mm
子类别：Programmable Logic Devices最大供电电压：5.5 V
最小供电电压：4.5 V标称供电电压：5 V
表面贴装：NO技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL处于峰值回流温度下的最长时间：30
宽度：7.62 mmBase Number Matches：1

GAL16V8D-25QPI 数据手册

 浏览型号GAL16V8D-25QPI的Datasheet PDF文件第2页浏览型号GAL16V8D-25QPI的Datasheet PDF文件第3页浏览型号GAL16V8D-25QPI的Datasheet PDF文件第4页浏览型号GAL16V8D-25QPI的Datasheet PDF文件第5页浏览型号GAL16V8D-25QPI的Datasheet PDF文件第6页浏览型号GAL16V8D-25QPI的Datasheet PDF文件第7页 
GAL16V8  
High Performance E2CMOS PLD  
Generic Array Logic™  
Features  
Functional Block Diagram  
I/CLK  
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY  
— 3.5 ns Maximum Propagation Delay  
— Fmax = 250 MHz  
CLK  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
8
8
OLMC  
— 3.0 ns Maximum from Clock Input to Data Output  
— UltraMOS® Advanced CMOS Technology  
I
I
I
I
I
I
I
I
• 50% to 75% REDUCTION IN POWER FROM BIPOLAR  
— 75mA Typ Icc on Low Power Device  
— 45mA Typ Icc on Quarter Power Device  
OLMC  
OLMC  
OLMC  
OLMC  
OLMC  
OLMC  
OLMC  
• ACTIVE PULL-UPS ON ALL PINS  
• E2 CELL TECHNOLOGY  
— Reconfigurable Logic  
— Reprogrammable Cells  
— 100% Tested/100% Yields  
— High Speed Electrical Erasure (<100ms)  
— 20 Year Data Retention  
8
8
8
8
8
8
• EIGHT OUTPUT LOGIC MACROCELLS  
— Maximum Flexibility for Complex Logic Designs  
— Programmable Output Polarity  
— Also Emulates 20-pin PAL® Devices with Full  
Function/Fuse Map/Parametric Compatibility  
• PRELOAD AND POWER-ON RESET OF ALL REGISTERS  
— 100% Functional Testability  
• APPLICATIONS INCLUDE:  
— DMA Control  
— State Machine Control  
— High Speed Graphics Processing  
— Standard Logic Speed Upgrade  
I/O/Q  
I/OE  
OE  
• ELECTRONIC SIGNATURE FOR IDENTIFICATION  
Pin Configuration  
PLCC  
I/CLK Vcc I/O/Q  
Description  
I
I
2
20  
The GAL16V8, at 3.5 ns maximum propagation delay time, com-  
bines a high performance CMOS process with Electrically Eras-  
able (E2) floating gate technology to provide the highest speed  
performance available in the PLD market. High speed erase times  
(<100ms) allow the devices to be reprogrammed quickly and ef-  
ficiently.  
DIP  
18  
16  
I/O/Q  
4
6
I
I/O/Q  
I/O/Q  
I
1
20  
Vcc  
I/CLK  
GAL16V8  
Top View  
I
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/OE  
I
I/O/Q  
I/O/Q  
I
I
I
GAL  
14  
I
8
The generic architecture provides maximum design flexibility by  
allowing the Output Logic Macrocell (OLMC) to be configured by  
the user. An important subset of the many architecture configura-  
tions possible with the GAL16V8 are the PAL architectures listed  
in the table of the macrocell description section. GAL16V8 devices  
are capable of emulating any of these PAL architectures with full  
function/fuse map/parametric compatibility.  
9
I
11  
13  
16V8  
GND I/OE I/O/Q I/O/Q  
5
I
I
SOIC  
15  
I/CLK  
I
1
20  
Vcc  
I
I
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/OE  
I
I
GAL  
16V8  
Top  
Unique test circuitry and reprogrammable cells allow complete AC,  
DC, and functional testing during manufacture. As a result, Lattice  
Semiconductor delivers 100% field programmability and function-  
ality of all GAL products. In addition, 100 erase/write cycles and  
data retention in excess of 20 years are specified.  
5
I
I
I
15  
11  
10  
11  
GND  
View  
I
I
I
10  
GND  
Copyright © 2001 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject  
to change without notice.  
LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.  
Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com  
May 2001  
1
16v8_08  
1234567...22

中文翻译

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GAL16V8D-25QPI 替代型号

型号 品牌 替代类型 描述 数据表
GAL16V8D-25QPNI LATTICE

完全替代

 High Performance E2CMOS PLD Generic Array Log
GAL16V8D-25LPNI LATTICE

类似代替

 High Performance E2CMOS PLD Generic Array Log
GAL16V8D-25QP LATTICE

类似代替

 High Performance E2CMOS PLD Generic Array Logic

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GAL16V8D-30LD LATTICE

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GAL16V8D-30LD/833 LATTICE

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GAL16V8D-30LD/883 ETC

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 		Electrically-Erasable PLD
GAL16V8D-3LJ LATTICE

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 		High Performance E2CMOS PLD Generic Array Logic
GAL16V8D-3LJN LATTICE

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 		High Performance E2CMOS PLD Generic Array Log
GAL16V8D-5LJ LATTICE

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GAL16V8D-5LJN LATTICE

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 		High Performance E2CMOS PLD Generic Array Log
GAL16V8D-7LD LATTICE

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 		High Performance E2CMOS PLD Generic Array Log

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