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G5SBA20-E3 PDF预览

G5SBA20-E3

更新时间: 2024-11-14 14:50:27
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
4页 363K
描述
DIODE 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode

G5SBA20-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.45其他特性:UL RECOGNIZED
最小击穿电压:200 V外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.05 V
JESD-30 代码:R-PSFM-T4JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:150 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:2.8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:200 V
子类别:Bridge Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

G5SBA20-E3 数据手册

 浏览型号G5SBA20-E3的Datasheet PDF文件第2页浏览型号G5SBA20-E3的Datasheet PDF文件第3页浏览型号G5SBA20-E3的Datasheet PDF文件第4页 
G5SBA20 thru G5SBA80  
Vishay General Semiconductor  
Glass Passivated Single-Phase Bridge Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
6 A  
200 V, 600 V, 800 V  
150 A  
Case Style GBU  
5 µA  
VF  
1.05 V  
Tj max.  
150 °C  
Features  
• UL Recognition file number E54214  
• Ideal for printed circuit boards  
• High surge current capability  
• High case dielectric strength of 1500 V  
• Solder Dip 260 °C, 40 seconds  
RMS  
Typical Applications  
Mechanical Data  
General purpose use in ac-to-dc bridge full wave rec-  
tification for Monitor, TV, Printer, Switching Mode  
Power Supply, Adapter, Audio equipment, and Home  
Appliances applications.  
Case: GBU  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated (E3 Suffix) leads, solder-  
able per J-STD-002B and JESD22-B102D  
Polarity: Color band denotes the cathode end  
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.  
Recommended Torque: 5.7 cm-kg (5 inches-lbs)  
Maximum Ratings  
TA = 25 °C, unless otherwise specified  
Parameter  
Symbol  
VRRM  
G5SBA20  
200  
G5SBA60  
600  
G5SBA80  
800  
Unit  
V
Maximum repetive peak reverse voltage  
Maximum RMS reverse voltage  
Maximum DC blocking voltage  
Maximum average forward rectified  
VRWM  
VDC  
140  
200  
420  
600  
560  
800  
V
V
A
T
C = 100 °C (1)  
IF(AV)  
6.0  
2.8  
output current at  
TA = 25 °C (2)  
Peak forward surge current single sine-wave  
superimposed on rated load  
IFSM  
150  
A
I2t  
A2sec  
°C  
Rating for fusing (t < 8.3 ms)  
93  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Note:  
(1) Unit case mounted on Al plate heatsink  
(2) Units mounted on P.C.B with 0.5 x 0.5” (12 x 12 mm) Copper pads and 0.375” (9.5 mm) lead length  
Document Number 88608  
29-Jul-05  
www.vishay.com  
1

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