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G5SBA80-M3 PDF预览

G5SBA80-M3

更新时间: 2024-11-15 01:10:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 90K
描述
Glass Passivated Single-Phase Bridge Rectifier

G5SBA80-M3 数据手册

 浏览型号G5SBA80-M3的Datasheet PDF文件第2页浏览型号G5SBA80-M3的Datasheet PDF文件第3页浏览型号G5SBA80-M3的Datasheet PDF文件第4页 
G5SBA20-M3, G5SBA60-M3, G5SBA80-M3  
www.vishay.com  
Vishay General Semiconductor  
Glass Passivated Single-Phase Bridge Rectifier  
FEATURES  
• UL recognition file number E54214  
• Ideal for printed circuit boards  
• High surge current capability  
• High case dielectric strength of 1500 VRMS  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
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~
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
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~
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Case Style GBU  
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Case Style GBU  
TYPICAL APPLICATIONS  
General purpose use in AC/DC bridge full wave rectification  
for monitor, TV, printer, switching mode power supply,  
adapter, audio equipment, and home appliances  
applications.  
PRIMARY CHARACTERISTICS  
Package  
GBU  
6.0 A  
MECHANICAL DATA  
IF(AV)  
Case: GBU  
VRRM  
IFSM  
200 V, 600 V, 800 V  
150 A  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
commercial grade  
IR  
5 μA  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
VF at IF = 3.0 A  
TJ max.  
1.05 V  
150 °C  
Diode variations  
In-line  
Polarity: As marked on body  
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.  
Recommended Torque: 5.7 cm-kg (5 inches-lbs)  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
G5SBA20  
200  
G5SBA60  
600  
G5SBA80  
800  
UNIT  
Maximum repetive peak reverse voltage  
Maximum RMS voltage  
VRRM  
V
V
V
VRWM  
VDC  
140  
420  
560  
Maximum DC blocking voltage  
200  
600  
800  
TC = 100 °C (1)  
TA = 25 °C (2)  
6.0  
Maximum average forward rectified  
output current at  
IF(AV)  
A
2.8  
Peak forward surge current single sine-wave  
superimposed on rated load  
IFSM  
150  
A
Rating for fusing (t < 8.3 ms)  
I2t  
93  
A2s  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
Notes  
(1)  
Unit case mounted on aluminum plate heatsink  
Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length  
(2)  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS SYMBOL  
G5SBA20 G5SBA60 G5SBA80  
UNIT  
Maximum instantaneous forward voltage per diode 3.0 A  
VF  
1.05  
5.0  
V
TJ = 25 °C  
TJ = 125 °C  
Maximum DC reverse current at rated DC  
blocking voltage per diode  
IR  
μA  
300  
Revision: 05-Aug-15  
Document Number: 89305  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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