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G5SBA60-E3 PDF预览

G5SBA60-E3

更新时间: 2024-11-14 20:00:07
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
4页 358K
描述
DIODE 2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode

G5SBA60-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.17
其他特性:UL RECOGNIZED最小击穿电压:600 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.05 VJESD-30 代码:R-PSFM-T4
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:150 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:2.8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:600 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

G5SBA60-E3 数据手册

 浏览型号G5SBA60-E3的Datasheet PDF文件第2页浏览型号G5SBA60-E3的Datasheet PDF文件第3页浏览型号G5SBA60-E3的Datasheet PDF文件第4页 
G5SBA20 thru G5SBA80  
Vishay General Semiconductor  
Glass Passivated Single-Phase Bridge Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
6 A  
200 V, 600 V, 800 V  
150 A  
Case Style GBU  
5 µA  
VF  
1.05 V  
Tj max.  
150 °C  
Features  
• UL Recognition file number E54214  
• Ideal for printed circuit boards  
• High surge current capability  
• High case dielectric strength of 1500 V  
• Solder Dip 260 °C, 40 seconds  
RMS  
Typical Applications  
Mechanical Data  
General purpose use in ac-to-dc bridge full wave rec-  
tification for Monitor, TV, Printer, Switching Mode  
Power Supply, Adapter, Audio equipment, and Home  
Appliances applications.  
Case: GBU  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated (E3 Suffix) leads, solder-  
able per J-STD-002B and JESD22-B102D  
Polarity: Color band denotes the cathode end  
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.  
Recommended Torque: 5.7 cm-kg (5 inches-lbs)  
Maximum Ratings  
TA = 25 °C, unless otherwise specified  
Parameter  
Symbol  
VRRM  
G5SBA20  
200  
G5SBA60  
600  
G5SBA80  
800  
Unit  
V
Maximum repetive peak reverse voltage  
Maximum RMS reverse voltage  
Maximum DC blocking voltage  
Maximum average forward rectified  
VRWM  
VDC  
140  
200  
420  
600  
560  
800  
V
V
A
T
C = 100 °C (1)  
IF(AV)  
6.0  
2.8  
output current at  
TA = 25 °C (2)  
Peak forward surge current single sine-wave  
superimposed on rated load  
IFSM  
150  
A
I2t  
A2sec  
°C  
Rating for fusing (t < 8.3 ms)  
93  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Note:  
(1) Unit case mounted on Al plate heatsink  
(2) Units mounted on P.C.B with 0.5 x 0.5” (12 x 12 mm) Copper pads and 0.375” (9.5 mm) lead length  
Document Number 88608  
29-Jul-05  
www.vishay.com  
1

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