Datasheet > G3400

G3400

更新时间： 2024-11-15 03:38:31

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	278K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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中文翻译

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数据手册

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G3400 数据手册

Pb Free Plating Product

ISSUED DATE :2006/08/14

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

30V

28mꢀ

5.8A

G3400

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

Description

The G3400 uses advanced trench technology to provide excellent on-resistance extremely efficient and

cost-effectiveness device.

The G3400 is universally used for all commercial-industrial applications.

Features

* Lower Gate Charge

*Small Package Outline

*RoHS Compliant

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

Min. Max.

1.90 REF.

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

2.70

2.40

1.40

0.35

1.00

1.30

0.20

0.10

0.40

0.85

0°

1.15

10°

0.45

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

Unit

Gate-Source Voltage

V_GS

±12

5.8

Continuous Drain Current³

Pulsed Drain Current^1,2

Total Power Dissipation

Linear Derating Factor

I_D@T

=25к

=70к

4.9

I_DM

P_D@T

A=25к

1.38

0.01

W/к

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-a

Value

Unit

к/W

Thermal Resistance Junction-ambient³Max.

G3400

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