Datasheet > G3407

G3407

更新时间： 2024-11-15 03:38:31

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	303K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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G3407 数据手册

Pb Free Plating Product

ISSUED DATE :2007/01/15

REVISED DATE :

GTM

CORPORATION

G3407

BVDSS

DS(ON)

-30V

52mꢀ

-4.1A

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

Description

The G3407 uses advanced trench technology to provide excellent on-resistance with low gate change.

The device is suitable for use as a load switch or in PWM applications.

Features

*Lower Gate Charge

*Small Package Outline

*RoHS Compliant

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

Min.

Max.

2.70

2.40

1.40

0.35

1.90 REF.

1.00

0.10

0.40

0.85

0°

1.30

0.20

1.15

10°

0.45

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

-30

Unit

Gate-Source Voltage

V_GS

±20

Continuous Drain Current³

Pulsed Drain Current¹

I_D@T

=25к

=70к

-4.1

-3.5

I_DM

-20

Power Dissipation

P_D@T

=25к

1.38

0.01

Linear Derating Factor

Operating Junction and Storage Temperature Range

W/к

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-a

Ratings

Unit

к/W

Thermal Resistance Junction-ambient³Max.

G3407

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