生命周期: | Contact Manufacturer | 包装说明: | BGA, |
Reach Compliance Code: | compliant | 风险等级: | 5.66 |
其他特性: | IT ALSO REQUIRES 2.5 TO 5.5 V | 接口集成电路类型: | INTERFACE CIRCUIT |
JESD-30 代码: | R-PBGA-B12 | 功能数量: | 1 |
端子数量: | 12 | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | BGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY | 最大供电电压: | 3.3 V |
最小供电电压: | 1.2 V | 表面贴装: | YES |
温度等级: | INDUSTRIAL | 端子形式: | BALL |
端子位置: | BOTTOM | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
G3403 | GTM |
获取价格 |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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G3403 | GMT |
获取价格 |
1-Bit, 2-Bit Bidirectional I2C Bus & Voltage-Level Shift, Open drain Input/Ouput |
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G3403A | GTM |
获取价格 |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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G3407 | GTM |
获取价格 |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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G34100B1EB1 | ETC |
获取价格 |
Single Phase Bridge |
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G34100B1EB1S | MICROSEMI |
获取价格 |
Silicon Power Rectifier Assemblies Plate Heatsink |
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G34100B1EBC1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, |
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G34100B1EC1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, |
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G34100B1EN1S | MICROSEMI |
获取价格 |
Silicon Power Rectifier Assemblies Plate Heatsink |
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G34100B1FB1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, |
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