Datasheet > FZT951

FZT951

更新时间： 2024-09-28 07:00:51

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
2页	38K
描述
PNP Silicon Planar High Current Transistors

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FZT951 数据手册

SMD Type

Transistors

PNP Silicon Planar High Current Transistors

FZT951

SOT-223

Unit: mm

+0.2

3.50

-0.2

Features

+0.2

6.50

-0.2

5 Amps continuous current , up to 15 Amps peak current.

Very low saturation voltages.

+0.2

0.90

-0.2

+0.1

3.00

-0.1

+0.3

7.00

-0.3

Excellent gain characteristics specified up to 10 Amps.

Ptot = 3 watts.

FZT951 exhibts extremely low equivalent on resistance;

R^CE(sat)55mÙ at 4A.

1 base

+0.1

0.70

-0.1

2.9

2 collector

3 emitter

4.6

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^CM

-100

-60

-6

Collector-emitter voltage

Emitter-base voltage

Continuous collector current

-15

Peak pulse current

-5

Power dissipation

Ptot

Operating and storage temperature range

T^j,Tstg

-55 to +150

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