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FZT951TC PDF预览

FZT951TC

更新时间: 2024-11-16 13:07:55
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管局域网
页数 文件大小 规格书
5页 102K
描述
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

FZT951TC 技术参数

是否Rohs认证:符合生命周期:Transferred
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.14
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):5 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):10
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP功耗环境最大值:3 W
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):120 MHzVCEsat-Max:0.46 V
Base Number Matches:1

FZT951TC 数据手册

 浏览型号FZT951TC的Datasheet PDF文件第2页浏览型号FZT951TC的Datasheet PDF文件第3页浏览型号FZT951TC的Datasheet PDF文件第4页浏览型号FZT951TC的Datasheet PDF文件第5页 
SOT223 PNP SILICON PLANAR HIGH CURRENT  
(HIGH PERFORMANCE) TRANSISTORS  
FZT951  
FZT953  
ISSUE 3 - APRIL 2000  
FEATURES  
*
*
*
*
*
5 Amps continuous current , up to 15 Amps peak current  
Very low saturation voltages  
Excellent gain characteristics specified up to 10 Amps  
C
Ptot = 3 watts  
E
FZT951 exhibts extremely low equivalent on resistance;  
RCE(sat) 55m at 4A  
C
COMPLEMENTARY TYPES - FZT951 = FZT851  
FZT953 = FZT853  
B
PARTMARKING DETAILS -  
DEVICE TYPE IN FULL  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
FZT951  
-100  
FZT953  
-140  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-60  
-100  
V
-6  
V
Peak Pulse Current  
-15  
-10  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
IC  
-5  
3
A
Ptot  
W
°C  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
*The power which can be dissipated assuming the device is mounted in a typical manner on a  
P.C.B. with copper equal to 4 square inch minimum  
3 - 279  

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