Datasheet > FYP1010DN_07

FYP1010DN_07

更新时间： 2024-10-15 03:11:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	190K
描述
Schottky Barrier Rectifier

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中文翻译

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数据手册

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FYP1010DN_07 数据手册

June 2007

FYP1010DN

Schottky Barrier Rectifier

•

Low forward voltage drop

High frequency properties and switching speed

Guard ring for over-voltage protection

Applications

•

Switched mode power supply

Freewheeling diodes

1.Anode

3.Anode

2. Cathode

TO220 (None Jedec type)

Absolute Maximum Ratings *T_C=25°C unless otherwise noted

Symbol Parameter

Value

100

Units

V_RRM

Maximum Repetitive Reverse Voltage

V_R

Maximum DC Reverse Voltage

100

I_F(AV)

I_FSM

Average Rectified Forward Current

@ T_C= 135°C

Non-repetitive Peak Surge Current (per diode)

60Hz Single Half-Sine Wave

100

T_J,T_STG

Operating Junction and Storage Temperature

-65 to +150

°C

Thermal Characteristics

Symbol

Parameter

Value

Units

R_θJC

Maximum Thermal Resistance, Junction to Case (per diode)

2.5

°C/W

Electrical Characteristics (per diode)

Symbol Parameter

Value

Units

V_FM

Maximum Instantaneous Forward Voltage

I_F= 5A

I_F= 10A

T_C= 25 °C

0.75

0.65

0.95

0.73

T_C= 125 °C

T_C= 25 °C

T_C= 125 °C

I_RM

Maximum Instantaneous Reverse Current

@ rated V_R

T_C= 25 °C

T_C= 125 °C

* Pulse Test: Pulse Width=300μs, Duty Cycle=2%

FYP1010DN Rev. C

www.fairchildsemi.com

12 3 4

中文翻译

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