Datasheet > FYP2010DN_09

FYP2010DN_09

更新时间： 2024-10-15 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	256K
描述
Schottky Barrier Rectifier

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中文翻译

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数据手册

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FYP2010DN_09 数据手册

August 2009

FYP2010DN

Schottky Barrier Rectifier

Features

• Low forward voltage drop

• High frequency properties and switching speed

• Guard ring for over-voltage protection

1.Anode

3.Anode

2. Cathode

2 3

TO-220

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Symbol

V_RRM

V_R

Parameter

Maximum Repetitive Reverse Voltage

Maximum DC Reverse Voltage

Value

Units

100

I_F(AV)

I_FSM

Average Rectified Forward Current

@ T_C= 120°C

Non-repetitive Peak Surge Current (per diode)

60Hz Single Half-Sine Wave

150

T_J,T_STG

Operating Junction and Storage Temperature

-65 to +150

°C

Thermal Characteristics

Symbol

Parameter

Value

Units

R_θJC

Maximum Thermal Resistance, Junction to Case (per diode)

1.7

°C/W

Electrical Characteristics (per diode)

Symbol Parameter

V_{FM *}

Value

Units

Maximum Instantaneous Forward Voltage

I_F= 10A

I_F= 20A

T_C= 25 °C

T_C= 125 °C

T_C= 25 °C

T_C= 125 °C

0.77

0.65

0.75

I_RM

Maximum Instantaneous Reverse Current

@ rated V_R

T_C= 25 °C

T_C= 125 °C

0.1

* Pulse Test: Pulse Width=300μs, Duty Cycle=2%

FYP2010DN Rev. B1

www.fairchildsemi.com

12 3 4

中文翻译

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