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FYP2010DNTU PDF预览

FYP2010DNTU

更新时间: 2024-01-19 19:42:18
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 整流二极管局域网
页数 文件大小 规格书
4页 273K
描述
Schottky Barrier Rectifier

FYP2010DNTU 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-220AB包装说明:LEAD FREE, TO-220, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.73Is Samacsys:N
其他特性:FREEWHEELING DIODE应用:GENERAL PURPOSE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:NOT APPLICABLE最大非重复峰值正向电流:150 A
元件数量:2相数:1
端子数量:3最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:COMMERCIAL最大重复峰值反向电压:100 V
表面贴装:NO技术:SCHOTTKY
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

FYP2010DNTU 数据手册

 浏览型号FYP2010DNTU的Datasheet PDF文件第2页浏览型号FYP2010DNTU的Datasheet PDF文件第3页浏览型号FYP2010DNTU的Datasheet PDF文件第4页 
August 2009  
FYP2010DN  
Schottky Barrier Rectifier  
Features  
• Low forward voltage drop  
• High frequency properties and switching speed  
• Guard ring for over-voltage protection  
1.Anode  
3.Anode  
2. Cathode  
1
2 3  
TO-220  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Symbol  
VRRM  
VR  
Parameter  
Maximum Repetitive Reverse Voltage  
Maximum DC Reverse Voltage  
Value  
Units  
100  
100  
20  
V
V
A
A
IF(AV)  
IFSM  
Average Rectified Forward Current  
@ TC = 120°C  
Non-repetitive Peak Surge Current (per diode)  
60Hz Single Half-Sine Wave  
150  
TJ, TSTG  
Operating Junction and Storage Temperature  
-65 to +150  
°C  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
RθJC  
Maximum Thermal Resistance, Junction to Case (per diode)  
1.7  
°C/W  
Electrical Characteristics (per diode)  
Symbol Parameter  
VFM *  
Value  
Units  
Maximum Instantaneous Forward Voltage  
IF = 10A  
IF = 10A  
IF = 20A  
IF = 20A  
TC = 25 °C  
TC = 125 °C  
TC = 25 °C  
TC = 125 °C  
0.77  
0.65  
-
V
0.75  
IRM  
Maximum Instantaneous Reverse Current  
@ rated VR  
TC = 25 °C  
TC = 125 °C  
0.1  
20  
*
mA  
* Pulse Test: Pulse Width=300μs, Duty Cycle=2%  
© 2009 Fairchild Semiconductor Corporation  
FYP2010DN Rev. B1  
www.fairchildsemi.com  
1

FYP2010DNTU 替代型号

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