Datasheet > FX6ASJ-03_06

FX6ASJ-03_06

更新时间： 2024-09-16 07:00:51

品牌	Logo	应用领域
瑞萨 - RENESAS		开关
页数	文件大小	规格书
7页	199K
描述
High-Speed Switching Use Pch Power MOS FET

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FX6ASJ-03_06 数据手册

FX6ASJ-03

High-Speed Switching Use

Pch Power MOS FET

REJ03G0247-0200

Rev.2.00

Nov 21, 2006

Features

•

Drive voltage : 4 V

_DSS: – 30 V

_{DS(ON) (max)}: 0.29 Ω

I_D: – 6 A

Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 40 ns

Outline

RENESAS Package code: PRSS0004ZA-A

(Package name: MP-3A)

1. Gate

2. Drain

3. Source

4. Drain

2, 4

Applications

Motor control, lamp control, solenoid control, DC-DC converters, etc.

Maximum Ratings

(Tc = 25°C)

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

Conditions

–30

V_GS= 0 V

±20

V_DS= 0 V

–6

Drain current (Pulsed)

Avalanche current (Pulsed)

Source current

I_DM

–24

I_DA

–6

L = 30 µH

I_S

Source current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Mass

I_SM

–24

P_D

°C

Tch

Tstg

—

– 55 to +150

0.32

Typical value

Rev.2.00 Nov 21, 2006 page 1 of 6

12 3 4 5 6 7

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FX6ASJ-06	MITSUBISHI	获取价格	HIGH-SPEED SWITCHING USE
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FX6ASJ-06-T13	RENESAS	获取价格	High-Speed Switching Use Pch Power MOS FET
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FX6ASJ-2	MITSUBISHI	获取价格	HIGH-SPEED SWITCHING USE
FX6ASJ-2	POWEREX	获取价格	Pch POWER MOSFET HIGH-SPEED SWITCHING USE