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FW905

更新时间： 2024-09-14 03:38:07
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三洋 - SANYO 开关通用开关
页数 文件大小 规格书
6页 55K
描述
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

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中文翻译

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FW905 技术参数

生命周期：Transferred零件包装代码：SOT
包装说明：SMALL OUTLINE, R-PDSO-G8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.38配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (Abs) (ID)：7 A
最大漏极电流 (ID)：7 A最大漏源导通电阻：0.024 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
元件数量：2端子数量：8
工作模式：DEPLETION MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)：2.5 W最大脉冲漏极电流 (IDM)：52 A
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FW905 数据手册

 浏览型号FW905的Datasheet PDF文件第2页浏览型号FW905的Datasheet PDF文件第3页浏览型号FW905的Datasheet PDF文件第4页浏览型号FW905的Datasheet PDF文件第5页浏览型号FW905的Datasheet PDF文件第6页 
Ordering number : EN8754  
SANYO Sem iconductors  
DATA S HEET  
N-Channel and P-Channel Silicon MOSFETs  
General-Purpose Switching Device  
Applications  
FW905  
Features  
• Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 2.5V supply voltage  
contained in a single package.  
• High-density mounting.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
N-channel  
20  
P-channel  
--20  
Unit  
V
V
DSS  
GSS  
V
±10  
7
±10  
--6  
V
I
A
D
Drain Current (PW≤10µs)  
I
Duty cycle≤1%  
52  
--52  
A
DP  
Mounted on a ceramic board  
(1500mm2✕0.8mm)1unit, PW≤10s  
Mounted on a ceramic board  
(1500mm2✕0.8mm), PW≤10s  
Allowable Power Dissipation  
Total Dissipation  
P
2.3  
W
W
D
P
2.5  
T
Channel Temperature  
Storage Temperature  
Tch  
150  
°C  
°C  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
[N-channel]  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0V  
20  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=20V, V =0V  
GS  
1
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±8V, V =0V  
DS  
±10  
V
(off)  
GS  
=10V, I =1mA  
0.5  
9
1.3  
D
Forward Transfer Admittance  
yfs  
=10V, I =7A  
15  
18  
S
D
R
(on)1  
(on)2  
I
I
=7A, V =4V  
GS  
24  
33  
mΩ  
mΩ  
pF  
pF  
pF  
DS  
D
Static Drain-to-Source On-State Resistance  
R
=3A, V =2.5V  
GS  
20  
DS  
D
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Marking : W905  
Ciss  
V
V
V
=10V, f=1MHz  
DS  
=10V, f=1MHz  
DS  
=10V, f=1MHz  
DS  
1530  
230  
215  
Coss  
Crss  
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
80906 / 22406PA MS IM TB-00002087  
No.8754-1/6  
123456

中文翻译

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