Datasheet > FTK7N65I

FTK7N65I

更新时间： 2024-11-02 02:50:59

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
7页	615K
描述
7.0 Amps, 650 Volts N-CHANNEL MOSFET

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FTK7N65I 数据手册

SEMICONDUCTOR

FTK7N65D/I/P/F/DD

TECHNICAL DATA

7.0 Amps, 650 Volts

N-CHANNEL MOSFET

DESCRIPTION

These N-Channel enhancement mode power field effect

Transistors are produced using planar stripe, DMOS

technology.

This advanced technology has been especially tailored

to minimize on - state resistance , provide superior

switching performance,and Withstand high energy pulse

in the avalanche and commutaion mode .These devices

are well suited for high efficiency switch mode power

supply electronic lamp ballasts

I :

TO - 251

D :

P :

F :

TO - 252

TO - 220

based on half bridge topology.

FEATURES

* R_DS(ON)= 1.4Ω@V_GS= 10V

* Low gate and reverse transfer Capacitance ( C: 12 pF typical )

* Fast switching capability

* Avalanche energy tested

* Improved dv/dt capability, high ruggedness

TO - 220F

SYMBOL

2.Drain

DD :

TO-263

1.Gate

3.Source

ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

Packing

FTK7N65P

FTK7N65F

FTK7N65I

FTK7N65D

TO-220

TO-220F

TO-251

TO-252

Tube

Tape Reel

FTK7N65DD

TO-263

Note: Pin Assignment:

G: Gate

D: Drain S: Source

2017. 01. 02

Revision No : 1

1/7

12 3 4 5 6 7

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