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FTK7NS65D PDF预览

FTK7NS65D

更新时间: 2024-10-29 02:51:43
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页数 文件大小 规格书
7页 618K
描述
7Amps, 650Volts N-Channel Super Juction MOS-FET

FTK7NS65D 数据手册

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SEMICONDUCTOR  
FTK7NS65P/F/D/I  
TECHNICAL DATA  
7Amps, 650Volts N-Channel Super Juction MOS-FET  
Product Summary  
P :  
VDS @ Tj,max  
RDS(on),max  
IDM  
650V  
0.57Ω  
21A  
1
TO-220  
Qg,typ  
15nC  
F :  
DESCRIPTION  
1
TO-220F  
FTK7NS65 Power MOS FET is fabricated using  
advanced super junction technology. The resulting  
device has extremely low on resistance, making it  
especially suitable for applications which require  
superior power density and outstanding efficiency.  
D :  
1
TO-252  
TO - 251  
FEATURES  
I :  
Ultra fast body diode  
Ultra low RDS(on)  
1
Ultra low gate charge (typ. Qg = 15nC)  
100% UIS tested  
RoHS compliant  
Applications  
SYMBOL  
Power faction correction (PFC).  
2.Drain  
Switched mode power supplies (SMPS).  
Uninterruptible power supply (UPS).  
1.Gate  
3.Source  
ORDERING INFORMATION  
Pin Assignment  
Packing  
Order Number  
Package  
1
2
3
FTK7NS65P  
FTK7NS65F  
FTK7NS65D  
FTK7NS65I  
TO-220  
TO-220F  
TO-252  
TO-251  
G
D
S
Tube  
Tube  
G
G
G
D
D
D
S
S
S
Tube  
Reel & Taping  
Note: Pin Assignmen:  
G: Gate  
D: Drain  
S: Source  
2016. 07. 05  
Revision No : 0  
1/7  

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