Datasheet > FTK8N80F

FTK8N80F

更新时间： 2024-02-07 17:15:57

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
8页	278K
描述
8.0 Amps, 800 Volts N-Channel MOS -FET

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数据手册

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FTK8N80F 数据手册

SEMICONDUCTOR

FTK8N80P/D/DD

TECHNICAL DATA

8.0 Amps, 800 Volts N-Channel MOS-FET

DESCRIPTION

These N-Channel enhancement mode power field effect

Transistors are produced using planar stripe, DMOS

technology.

P :

This advanced technology has been especially tailored

to minimize on - state resistance , provide superior

switching performance,and Withstand high energy pulse

in the avalanche and commutaion mode .These devices

are well suited for high efficiency switch mode power

TO-220

F :

supply electronic lamp ballasts

based on half bridge topology.

TO-220F

FEATURES

* R_DS(ON)= 1.9Ω@V_GS= 10V

* Fast switching capability

* Avalanche energy tested

DD :

* Improved dv/dt capability, high ruggedness

TO-263

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Pin Assignment

Order Number

Package

Packing

FTK8N80P

FTK8N80F

FTK8N80DD

TO-220

TO-220F

TO-263

Tube

Reel & Taping

Note: Pin Assignmen:

G: Gate

D: Drain

S: Source

2012. 07. 05

Revision No : 0

1/8

12 3 4 5 6 7 8

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