SEMICONDUCTOR
FTK7NS65P/F/D/I
TECHNICAL DATA
7Amps, 650Volts N-Channel Super Juction MOS-FET
Product Summary
P :
VDS @ Tj,max
RDS(on),max
IDM
650V
0.57Ω
21A
1
TO-220
Qg,typ
15nC
F :
DESCRIPTION
1
TO-220F
FTK7NS65 Power MOS FET is fabricated using
advanced super junction technology. The resulting
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
D :
1
TO-252
TO - 251
FEATURES
I :
�
�
�
�
�
Ultra fast body diode
Ultra low RDS(on)
1
Ultra low gate charge (typ. Qg = 15nC)
100% UIS tested
RoHS compliant
Applications
SYMBOL
�
Power faction correction (PFC).
2.Drain
�
�
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
1.Gate
3.Source
ORDERING INFORMATION
Pin Assignment
Packing
Order Number
Package
1
2
3
FTK7NS65P
FTK7NS65F
FTK7NS65D
FTK7NS65I
TO-220
TO-220F
TO-252
TO-251
G
D
S
Tube
Tube
G
G
G
D
D
D
S
S
S
Tube
Reel & Taping
Note: Pin Assignmen:
G: Gate
D: Drain
S: Source
2016. 07. 05
Revision No : 0
1/7