Datasheet > FTK11NS70D

FTK11NS70D

更新时间： 2022-06-24 15:42:23

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
7页	692K
描述
11Amps, 700Volts N-Channel Super Juction MOS-FET

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FTK11NS70D 数据手册

SEMICONDUCTOR

TECHNICAL DATA

FTK11NS70P/F/D

11Amps, 700Volts N-Channel Super Juction MOS-FET

Product Summary

VDS @ Tj,max

R^DS(on),max

I^DM

700V

0.36Ω

30A

P :

TO-220

Q^g,typ

28nC

DESCRIPTION

FTK11NS70 Power MOS FET is fabricated using

advanced super junction technology. The resulting

device has extremely low on resistance, making it

especially suitable for applications which require

superior power density and outstanding efficiency.

F :

TO-220F

FEATURES

D :

�

Ultra fast body diode

Ultra low RDS(on)

TO-252

Ultra low gate charge (typ. Qg = 28nC)

100% UIS tested

RoHS compliant

Applications

SYMBOL

�

Power faction correction (PFC)

2.Drain

�

Switched mode power supplies (SMPS)

Uninterruptible power supply (UPS)

1.Gate

3.Source

ORDERING INFORMATION

Pin Assignment

Order Number

Package

Packing

FTK11NS70P

FTK11NS70F

FTK11NS70D

TO-220

TO-220F

TO-252

Tube

Note. Pin Assignmen

G: Gate

D: Drain

S: Source

2019. 05. 30

Revision No : 0

1/7

12 3 4 5 6 7

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