SEMICONDUCTOR
FTK12N65P/F/DD
TECHNICAL DATA
12 Amps, 650 Volts N-CHANNEL MOSFET
DESCRIPTION
These N-Channel enhancement mode power field effect
Transistors are produced using planar stripe, DMOS
P :
technology.
1
This advanced technology has been especially tailored
to minimize on - state resistance , provide superior
switching performance,and Withstand high energy pulse
in the avalanche and commutaion mode .These devices
are well suited for high efficiency switch mode power
TO-220
supply electronic lamp ballasts
based on half bridge topology.
F :
1
TO-220F
FEATURES
* RDS(ON) = 0.8Ω@VGS = 10V
* Fast switching capability
* Avalanche energy tested
DD :
1
* Improved dv/dt capability, high ruggedness
TO-263
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Pin Assignment
Order Number
Package
Packing
1
2
3
FTK12N65P
FTK12N65F
FTK12N65DD
TO-220
TO-220F
TO-263
G
D
S
Tube
Tube
G
G
D
D
S
S
Reel & Taping
Note: Pin Assignment:
G: Gate
D: Drain
S: Source
2012. 07. 03
Revision No : 0
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