生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T12 |
针数: | 12 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.84 | 其他特性: | LOGIC LEVEL COMPATIBLE |
配置: | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 120 V |
最大漏极电流 (ID): | 1.5 A | 最大漏源导通电阻: | 1.7 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 30 pF |
JESD-30 代码: | R-PSIP-T12 | 元件数量: | 4 |
端子数量: | 12 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 28 W |
最大脉冲漏极电流 (IDM): | 3 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FT6120D | FUJITSU |
获取价格 |
1.5A, 120V, 1.7ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, RM-67, 12 PIN | |
FT6121 | FUJITSU |
获取价格 |
2.5A, 120V, 0.75ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, RM-67, 12 PIN | |
FT6121D | FUJITSU |
获取价格 |
2.5A, 120V, 0.75ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, RM-67, 12 PIN | |
FT6122 | FUJITSU |
获取价格 |
4A, 120V, 0.5ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, RM-67, 12 PIN | |
FT6122D | FUJITSU |
获取价格 |
4A, 120V, 0.5ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, RM-67, 12 PIN | |
FT6163 | FORCE |
获取价格 |
Ultra High Speed 8K x 9 Static Cmos Rams | |
FT6163L-25CCLF | FORCE |
获取价格 |
Ultra High Speed 8K x 9 Static Cmos Rams | |
FT6163L-25CMBLF | FORCE |
获取价格 |
Ultra High Speed 8K x 9 Static Cmos Rams | |
FT6163L-25CMLF | FORCE |
获取价格 |
Ultra High Speed 8K x 9 Static Cmos Rams | |
FT6163L-25FCLF | FORCE |
获取价格 |
Ultra High Speed 8K x 9 Static Cmos Rams |