FT6163/FT6163L
Ultra High Speed 8K x 9
Static Cmos Rams
FEATURES
Data Retention with 2.0V Supply, 10 µA Typical
Full CMOS, 6T Cell
Current (FT6163L Military)
High Speed (Equal Access and Cycle Times)
– 25/35ns (Commercial)
Common I/O
– 25/35/45ns (Military)
Fully TTL Compatible Inputs and Outputs
Low Power Operation (Commercial/Military)
Standard Pinout (JEDEC Approved)
– 28-Pin 300 mil DIP, SOJ
– 28-Pin 350 x 550 mil LCC
– 28-Pin CERPACK
Output Enable and Dual Chip Enable Control
Functions
Single 5V±10% Power Supply
DESCRIPTION
Accesstimesasfastas25nanosecondsareavailable,per-
mittinggreatlyenhancedsystemoperatingspeeds.CMOS
is used to reduce power consumption in both active and
standbymodes.
TheFT6163andFT6163Lare73,728-bitultrahigh-speed
staticRAMsorganisedas8Kx9.TheCMOSmemoriesre-
quire no clocks or refreshing and have equal access and
cycle times. Inputs are fully TTL-compatible. The RAMs
operate from a single 5V±10% tolerance power supply.
Withbatterybackup,dataintegrityismaintainedforsupply
voltages down to 2.0V. Current drain is 10 µA from a 2.0V
supply.
The FT6163 and FT6163L are available in 28-pin 300 mil
DIP and SOJ, 28-pin 350 x 550 mil LCC, and 28-pin
CERPACKpackagesprovidingexcellentboardleveldensi-
ties.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATIONS
DIP (P5, C5), SOJ (J5)
CERPACK (F4) SIMILAR
LCC (L5
REV 1.2
1/13
2008